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首页> 外文期刊>Journal of Crystal Growth >Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate
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Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate

机译：在GaN纳米粉体衬底上生长的MOVPE和HVPE GaN膜的结构和光学性质

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A new approach to fabricate GaN films has been proposed. The GaN films were grown by both the metalorganic chemical vapor phase epitaxy (MOVPE) and the hydride vapor phase epitaxy (HVPE) on GaN nanocrystalline powder compressed to a wafer substrate. GaN powder has been synthesized by reacting gallium oxide (Ga2O3) with ammonia (NH3) using a horizontal quartz reactor, The samples were examined by X-ray diffraction (XRD) and photoluminescence (PL). XRD reveals that the GaN powder and MOVPE and HVPE GaN films are of single-phase wurtzite structure. In the case of GaN powder, XRD spectra typical of powder with a lot of diffraction peaks related to different crystallographic directions have been observed. In the case of the MOVPE and HVPE GaN films, the XRD spectrum has changed significantly. It has been observed that some directions of the growth are favorable, e.g. in the case of HVPE film, the peaks related to (002) and (103) directions start to be evidently dominating. Also, it has been observed that PL spectrum for the GaN films is completely different from the one for GaN powder. In the case of GaN powder, only a broad yellow emission has been observed, while in the case of MOVPE and HVPE GaN films, very weak yellow emission and strong emission related to the band gap has been found. (c) 2005 Elsevier B.V. All rights reserved.
机译：已经提出了制造GaN膜的新方法。通过金属有机化学气相外延（MOVPE）和氢化物气相外延（HVPE）在压缩到晶片衬底上的GaN纳米晶体粉末上生长GaN膜。通过使用卧式石英反应器使氧化镓（Ga2O3）与氨（NH3）反应来合成GaN粉。通过X射线衍射（XRD）和光致发光（PL）检查样品。 XRD分析表明，GaN粉末，MOVPE和HVPE GaN薄膜均为单相纤锌矿结构。在GaN粉末的情况下，已经观察到典型的粉末的XRD光谱，该粉末具有与不同的晶体学方向相关的许多衍射峰。在MOVPE和HVPE GaN薄膜的情况下，XRD光谱已发生显着变化。已经观察到，某些生长方向是有利的，例如。在HVPE薄膜的情况下，与（002）和（103）方向有关的峰开始明显占优势。另外，已经观察到GaN膜的PL光谱与GaN粉末的PL光谱完全不同。在GaN粉的情况下，仅观察到宽泛的黄光发射，而在MOVPE和HVPE GaN膜的情况下，已发现非常弱的黄光发射和与带隙相关的强发射。 （c）2005 Elsevier B.V.保留所有权利。

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