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首页> 外文期刊>Journal of Crystal Growth >Crystal growth and optical properties of Dy: La_3Ga_5SiO_(14) single crystals
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Crystal growth and optical properties of Dy: La_3Ga_5SiO_(14) single crystals

机译：Dy：La_3Ga_5SiO_（14）单晶的晶体生长和光学性质

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摘要

In this paper, single crystals of dysprosium (Dy) doped La_3Ga_5SiO_(14) have been grown along c-axis by using the Czochralski method. The structure of the crystal has been studied by X-ray powder diffraction method and it is found that the crystal structure still belongs to the space group P321, and the unit-cell parameters are calculated to be a = 0.816212 +- 0.000861 nm, c = 0.508083 +- 0.000617nm and V = 0.29314nm~3. The absorption spectrum and fluorescence spectrum of Dy~(3+) : La_3Ga_5SiO_(14) crystal are measured at room temperature, and there are four emission transitions occurring at 479, 576, 662 and 754 nm; however, the yellow emission transitions (~4F_(9/2)→~6H_(13/2)) at 576 nm are more intense than others. The segregation coefficients of Dy~(3+) in La_3Ga_5SiO_(14) crystal were measured by X-ray fluorescence analysis. For 1 mol% doping level in the melt, the distribution coefficient of Dy~(3+) was determined to be 0.432 wt%.
机译：在本文中，使用切克劳斯基（Czochralski）方法沿C轴生长了掺（Dy）的La_3Ga_5SiO_（14）单晶。通过X射线粉末衍射法研究了晶体的结构，发现该晶体结构仍属于空间群P321，并且晶胞参数经计算为a = 0.816212 +-0.000861 nm，c ＝ 0.508083±0.000617nm且V ＝ 0.29314nm〜3。 Dy_（3 +）：La_3Ga_5SiO_（14）晶体的吸收光谱和荧光光谱在室温下测量，在479、576、662和754 nm处发生四个发射跃迁；但是，在576 nm处的黄色发射跃迁（〜4F_（9/2）→〜6H_（13/2））比其他跃迁更强烈。用X射线荧光分析法测定了La_3Ga_5SiO_（14）晶体中Dy〜（3+）的偏析系数。对于熔体中1mol％的掺杂水平，Dy〜（3+）的分布系数确定为0.432wt％。

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