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首页> 外文期刊>Journal of Crystal Growth >The role of morphology in the relaxation of strain in InGaAs/GaAs
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The role of morphology in the relaxation of strain in InGaAs/GaAs

机译：InGaAs / GaAs中形貌在应变松弛中的作用

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摘要

The mechanisms for stress relaxation have been investigated during growth of InGaAs/GaAs heterostructures in a regime where misfit dislocations and surface morphology strongly interact. Real time stress evolution was obtained using an in situ multi-beam optical stress sensor measurement during molecular beam epitaxy of In_(0.2)Ga_(0.8)As on a semi-insulating GaAs(001) substrate misoriented 2° toward the [110] direction. This real time data was compared to analysis of data obtained from X-ray diffraction and atomic force microscopy. Several distinct stages of the stress evolution were observed during growth that are correlated to the development of morphology and strain relaxation in these films. The stress evolution is divided in four regimes: pseudomorphic growth, slow strain relaxation, fast strain relaxation and saturation. The stress is initially relieved partially by widely spaced 3D features that develop on the surface. As the growth thickness continues beyond 900 A and the critical thickness for misfit dislocation formation is exceeded, a cross-hatch morphology overtakes the 3D morphology coincident with the rapid relaxation regime and dislocation formation. An instantaneous tensile stress appears during this stage of growth that is associated with the coalescence of the surface undulations created by the cross-hatch.
机译：在InGaAs / GaAs异质结构的生长过程中，在错配位错和表面形态强烈相互作用的状态下，研究了应力松弛的机制。使用In_（0.2）Ga_（0.8）As分子束外延在向[110]方向错位2°的半绝缘GaAs（001）衬底上进行分子束外延期间，使用原位多光束光学应力传感器测量获得了实时应力演变。 。将该实时数据与从X射线衍射和原子力显微镜获得的数据进行分析。在生长过程中观察到了应力演化的几个不同阶段，这些阶段与这些薄膜的形态发展和应变松弛相关。应力演化分为四个阶段：拟晶生长，缓慢应变松弛，快速应变松弛和饱和。最初，表面上形成的宽间隔3D特征可部分缓解应力。随着生长厚度继续超过900 A，并且超过了错配位错形成的临界厚度，交叉影线形态超过了3D形态，与快速弛豫机制和位错形成相吻合。在生长的这个阶段出现了瞬时拉应力，这与交叉影线产生的表面起伏的合并有关。

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