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首页> 外文期刊>Journal of Crystal Growth >Homoepitaxial growth of (0001)- and (0001)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization
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Homoepitaxial growth of (0001)- and (0001)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

机译：金属有机气相外延生长（0001）-和（0001）-取向ZnO薄膜的同质外延生长及其表征

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摘要

Homoepitaxial ZnO films have been grown via metalorganic vapor-phase epitaxy on O- and Zn-terminated basal-plane-oriented ZnO substrates. Maps of on-axis X-ray rocking curves obtained over 2-in-diameter ZnO{0001} wafers, diced from boules produced by vapor phase transport, revealed well-defined areas that ranged from <50 to >1050 arcsec FWHM, indicating the presence of tilted domains. This macrostructure was manifested in all the homoepitaxial ZnO films deposited on these wafers. The films grown on O-terminated ZnO surfaces were initially dense. However, they changed to a textured polycrystalline microstructure after ≈100 nm and possessed a surface roughness of 7.3 nm. By contrast, the films grown on the Zn-terminated surface under the same conditions were fully dense, without texture and appeared to be monocrystalline with a significantly improved surface roughness of 3.4 nm. Cross-sectional transmission electron microscopy of the wafers revealed high densities of edge dislocations and stacking faults with associated Frank partial dislocations.
机译：通过金属有机气相外延在O和Zn端基面取向的ZnO衬底上生长了同质外延ZnO膜。从气相沉积产生的圆棒切成小方块，在直径为2英寸的ZnO {0001}晶片上获得的轴上X射线摇摆曲线图揭示了清晰的区域，范围从<50到> 1050 arcsec FWHM，表明倾斜域的存在。这种宏观结构在沉积在这些晶片上的所有同质外延ZnO薄膜中均得到体现。在O端ZnO表面上生长的薄膜最初是致密的。但是，在≈100nm之后，它们变成了织构化的多晶微结构，并具有7.3 nm的表面粗糙度。相比之下，在相同条件下在Zn终止的表面上生长的膜是完全致密的，没有纹理，并且看起来是单晶的，表面粗糙度显着提高了3.4 nm。晶片的横截面透射电子显微镜显示出高密度的边缘位错和堆垛层错以及相关的弗兰克局部位错。

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