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首页> 外文期刊>Journal of Crystal Growth >Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

机译：极化场对（0001）和（11（2）-bar0）平面AlGaN / GaN异质结构中二维电子气形成的影响

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摘要

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.
机译：通过金属有机化学气相沉积法在蓝宝石衬底上生长的（GaN）AlGaN / GaN异质结构中，在（0001）和（11）（bar0）上进行了光致发光（PL）和温度相关的霍尔效应测量。沿着（0001）AlGaN / GaN异质结构的生长方向有很强的自发和压电电场（SPF）。同时，沿着（1120）AlGaN / GaN没有对应的SPF。在室温下（0001）AlGaN / GaN异质界面中，在3.258 eV处观察到与二维电子气（2DEG）和光激发空穴之间的复合有关的强PL峰，而在（11（2））中未观察到相应的PL峰bar0）。在（0001）AlGaN / GaN多层中观察到2DEG的存在，其迁移率在低于80 K的6000 cm（2）/ V s处饱和，而在（11（2）在bar0上）测得的迁移率低得多。这些结果表明，SPF是引起AlGaN / GaN异质结构中高迁移率和高薄层电子密度2DEG的主要元素。 （C）2004 Elsevier B.V.保留所有权利。

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