...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy
【24h】

Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy

机译：通过分子束外延在取向不正确的GaAs（111）b衬底上生长的InGaAsN量子阱的结构和光学质量

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An analysis of the effect of different growth parameters in the optical and structural properties of InGaAsN quantum wells (QWs) on misoriented (111)B GaAs substrates is presented. The nitrogen incorporation and crystal quality were found to be dependent on the arsenic flux used. The effect of the low temperature GaAs as cap layers for the QWs was studied by atomic force microscopy and by reflection high energy electron diffraction observations of the growing surface. New features in the (2 x 2) reconstruction were observed whilst growing at low temperature under a nitrogen atmosphere in the chamber, possibly due to competition between As and N species on the surface. This study has led to the fabrication of QW structures emitting at wavelengths above 1.5 mum, the longest reported up to date for this kind of substrates. (C) 2004 Elsevier B.V. All rights reserved.
机译：提出了不同生长参数对InGaAsN量子阱（QWs）的光学和结构特性在取向错误的（111）B GaAs衬底上的影响的分析。发现氮的掺入和晶体质量取决于所使用的砷通量。通过原子力显微镜和生长表面的反射高能电子衍射观察，研究了低温GaAs作为QW覆盖层的作用。观察到（2 x 2）重建中的新特征，同时在室内氮气气氛下在低温下生长，这可能是由于表面上的As和N物种之间的竞争所致。这项研究导致了QW结构的制造，该结构发射的波长大于1.5微米，是迄今为止报道的最长的此类基板。 （C）2004 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号