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首页> 外文期刊>Journal of Crystal Growth >Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer
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Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

机译：通过插入低温AlN中间层减少在Si（111）上生长的GaN中的拉伸应力

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摘要

This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.
机译：这项研究描述了用于Al（Si（111））上无裂纹GaN生长的低温AlN中间层的生长。结果表明，除了较低的生长温度外，在富Al条件下AlN中间层的生长是Si（111）衬底上无裂纹GaN生长的关键因素。通过X射线三晶衍射研究了AlN中间层厚度和NH3 / TMA1比对随后生长的高温GaN晶格常数的影响。结果表明，微裂纹的消除与GaN外延层中拉应力的减小有关。这也与在富铝条件下生长的AlN中间层中形成的大量凹坑相吻合。建议将这些凹坑用作产生错位错位的中心，从而导致拉应力的减小。 （C）2004 Elsevier B.V.保留所有权利。

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