...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN
【24h】

Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN

机译：AlN中间层对无裂纹AlGaN和GaN上AlN / GaN多层MOVPE生长的应变效应

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effect of growth conditions and thickness of AlN interlayers on the strain state of MOVPE-grown Al_xGa_(1-x)N epilayers on GaN/sapphire templates has been investigated. It was found that in almost all cases, the AlN interlayers apply a compressive strain to the AlGaN layer and prevent the formation of cracks. From use of both atomic force microscopy and cross-sectional electron microscopy, it appears that micro-cracking of the AlN interlayer itself occurs, thereby causing compression of the subsequent AlGaN layer. These cracks appear not to propagate beyond the AlN and are covered during AlGaN deposition. The growth conditions of the interlayer affect the crack network and surface morphology, which in turn determine the strain state of the AlGaN: the compressive strain was found to increase with interlayer thickness, decreasing Ⅴ/Ⅲ ratio and decreasing interlayer deposition temperature. The growth of crack-free AlN/GaN multilayers with individual layer thicknesses exceeding 60 nm has also been achieved.
机译：研究了生长条件和AlN中间层厚度对GaN /蓝宝石模板上MOVPE生长的Al_xGa_（1-x）N外延层的应变状态的影响。已经发现，在几乎所有情况下，AlN中间层都对AlGaN层施加压缩应变并防止了裂纹的形成。从原子力显微镜和截面电子显微镜的使用来看，似乎发生了AlN中间层本身的微裂纹，从而引起随后的AlGaN层的压缩。这些裂纹似乎不会传播到AlN之外，而是在AlGaN沉积过程中被覆盖。中间层的生长条件影响裂纹网络和表面形态，进而决定AlGaN的应变状态：发现压缩应变随中间层厚度的增加，Ⅴ/Ⅲ比的降低和中间层沉积温度的降低而增加。还实现了单层厚度超过60 nm的无裂纹AlN / GaN多层膜的生长。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号