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首页> 外文期刊>Journal of Crystal Growth >The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD
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The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD

机译：氨气预热对TPIS-MOCVD生长的InGaN薄膜的影响

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摘要

The InGaN films on GaN layers using a thermally pre-cracked ion-supplied metalorganic chemical vapor deposition (TPIS-MOCVD) system were investigated by a high-resolution X-ray diffraction and the thermodynamic analysis was performed for an NH_3 pre-heater by using the computational fluid-dynamic simulations. As the flow rates of NH_3 increased, the In composition and the thickness of the InGaN films increased, which meant that the relative indium incorporation efficiency was dependent on the NH_3 flow rate and affected by the growth rate. In a low NH_3 flow condition, indium metal droplets appeared on the surface of the InGaN layer in a conventional MOCVD system and decreased the indium incorporation efficiency of the InGaN films. The thermodynamic model of the ammonia dissociation did not follow equilibrium conditions and adduct-driven species seemed the actual growth precursors in nitride. The catalyst effect of the NH_3 pre-heater plays an important role in the mixing region and growing surface, resulting in the higher indium incorporation and droplet-free surface in a TPIS-MOCVD system.
机译：通过高分辨率X射线衍射研究了使用热预裂解离子提供的金属有机化学气相沉积（TPIS-MOCVD）系统在GaN层上的InGaN膜，并使用NH_3预热器进行了热力学分析。计算流体动力学模拟。随着NH_3流量的增加，In的组成和InGaN膜的厚度也增加，这意味着铟的相对引入效率取决于NH_3的流量，并受生长速度的影响。在低NH_3流动条件下，在常规MOCVD系统中，铟金属滴出现在InGaN层的表面上，并且降低了InGaN膜的铟结合效率。氨离解的热力学模型没有遵循平衡条件，加合物驱动的物质似乎是氮化物中实际的生长前体。 NH_3预热器的催化作用在混合区域和生长表面中起着重要作用，从而导致TPIS-MOCVD系统中更高的铟掺入量和无液滴表面。

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