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首页> 外文期刊>Journal of Crystal Growth >Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy
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Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy

机译：固体源分子束外延生长自组装GaInNAs量子点的光学性质

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摘要

Self-assembled GaInNAs/GaAs quantum dots (QDs) are promising structures for extending the emission wavelength of GaInNAs/GaAs quantum wells from 1.3 to 1.55 μm and beyond. We report herein the growth of GaInNAs/GaAs quantum dot samples of different deposited thickness by solid source molecular beam epitaxy using active nitrogen radicals generated by a radio frequency nitrogen plasma source. Images from atomic force spectroscopy reveal the increase of non-uniformity QDs size following the increase in the deposited thickness. Temperature-dependent photoluminescence (PL) measurements show PL line width shrinkage at low temperature suggests the relaxation of carriers into neighboring QD local-energy minimum. The low thermal activation energy of ～72 meV, estimated from the temperature-dependent integrated PL intensity curve suggests the existence of non-radiative recombination centers that quench the luminescence intensity at higher temperature.
机译：自组装GaInNAs / GaAs量子点（QD）是有望将GaInNAs / GaAs量子阱的发射波长从1.3扩展到1.55μm甚至更大的结构。我们在这里报告了使用射频氮等离子体源产生的活性氮自由基通过固体源分子束外延生长不同沉积厚度的GaInNAs / GaAs量子点样品的过程。来自原子力光谱的图像显示，随着沉积厚度的增加，不均匀QD尺寸的增加。温度相关的光致发光（PL）测量表明，低温下PL线宽的收缩表明载流子向相邻QD局部能量最小值的弛豫。根据与温度有关的积分PL强度曲线估算的低至约72 meV的热活化能表明，存在非辐射复合中心，该复合中心可在较高温度下淬灭发光强度。

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