...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy
【24h】

Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy

机译：金属有机气相外延法控制ZnO向纳米棒结构或高质量层状结构的生长模式

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In metal-organic vapor phase epitaxy (MOVPE), ZnO growth modes either for nanorod structures or for high-quality flat layers have been successfully controlled by varying the growth conditions. The nanorod structures of ZnO, e.g., 10―50nm in diameter and 0.5―1 μm in height, were successfully grown on sapphire substrates at lower temperatures (e.g., 500℃). On the other hand, the uniform layers were formed at higher growth temperatures (e.g., 800℃). The best solution, at this stage, for flat epilayers with two-dimensional growth is the homoepitaxial growth on bulk ZnO substrates. The root mean square (RMS) roughness of the surface was minimized as 2nm and the full-width at half-maximum of low-temperature (9K) photoluminescence was as narrow as O.SmeV, indicating the successful formation of high-quality ZnO grown by MOVPE.
机译：在金属有机气相外延（MOVPE）中，通过改变生长条件，可以成功地控制纳米棒结构或高质量平坦层的ZnO生长模式。 ZnO纳米棒结构的直径为10〜50nm，高度为0.5〜1μm，可以在较低的温度（例如500℃）下成功地生长在蓝宝石衬底上。另一方面，均匀层是在较高的生长温度（例如800℃）下形成的。在此阶段，具有二维生长的平坦外延层的最佳解决方案是在块状ZnO衬底上进行同质外延生长。表面的均方根（RMS）粗糙度最小为2nm，并且低温（9K）光致发光的半峰全宽窄至O.SmeV，表明成功形成了高质量的ZnO。由MOVPE。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号