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首页> 外文期刊>Journal of Crystal Growth >Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(100) substrate
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Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(100) substrate

机译：通过热蒸发在邻近的Si（100）衬底上生长氧化锌纳米线

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摘要

The growth behavior of ZnO nanowires on an anisotropic crystalline substrate has been investigated in this work. On both the vicinal Si(100) substrate with a 6° miscut angle in the [011] Si direction and the on-axis Si(100) substrate, ZnO nanowires have been directly grown by thermal evaporation using the ball-milled ZnO powders under controlled conditions without the presence of catalyst. In this work, we confirmed that the vicinal surface of the substrate leads to selective growth during the initial growth of ZnO nanowires. For the vicinal substrate that consists of terraces separated by steps, ZnO nanowires are preferentially grown near step-edge lines aligned along the [011] Si azimuth. For the on-axis substrate, on the other hand, ZnO nanowires are randomly grown on the whole surface of the substrate. In addition, the average diameter of the nanowires grown on the vicinal substrate is slightly thinner than that of the nanowires grown on the on-axis substrate. The vapor-solid model is also proposed to explain the growth behavior of ZnO nanowires in our synthesis process.
机译：在这项工作中已经研究了ZnO纳米线在各向异性晶体衬底上的生长行为。在沿[011] Si方向错切角为6°的附近Si（100）衬底和同轴Si（100）衬底上，使用球磨ZnO粉末通过热蒸发直接在以下条件下生长ZnO纳米线。在没有催化剂存在的情况下控制条件。在这项工作中，我们证实了衬底的邻近表面会导致ZnO纳米线的初始生长过程中的选择性生长。对于由阶梯分隔的阶地组成的邻近基底，ZnO纳米线优先生长在沿着[011] Si方位角对齐的阶梯边缘线附近。另一方面，对于轴上基板，ZnO纳米线在基板的整个表面上随机生长。另外，在邻近基底上生长的纳米线的平均直径比在轴上基底上生长的纳米线的平均直径稍细。还提出了气固模型来解释我们合成过程中ZnO纳米线的生长行为。

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