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首页> 外文期刊>Journal of Crystal Growth >Observations of nitrogen-related photoluminescence bands from nitrogen-doped ZnO films
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Observations of nitrogen-related photoluminescence bands from nitrogen-doped ZnO films

机译：氮掺杂ZnO薄膜中氮相关的光致发光带的观察

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摘要

We report the synthesis and photoluminescence (PL) properties of nitrogen-doped ZnO films. These films were synthesized by filtered cathodic vacuum arc technique; nitrogen gas was used as a dopant source. X-ray diffraction results indicated that the ZnO films were highly c-axis oriented. The appearance of the nitrogen-related local vibrational Raman scattering peaks showed that nitrogen was incorporated into the films. In the PL spectrum of the undoped films, a near band edge exciton emission peak at 384 nm and a weak visible band related to oxygen interstitial at 660 nm were observed. For nitrogen-doped films, besides the two emission bands observed in the undoped samples, two additional PL bands at around 450 and 890 nm were detected. According to the first-principle total energy calculation, nitrogen-induced acceptor energy level is located at 0.4eV above the valence band maximum. Therefore the emission band at around 450 nm may originate from the recombination of photo-generated electrons with neutral nitrogen acceptors, and the 890 nm band is attributed to electron transition from oxygen interstitial to this neutral nitrogen acceptors.
机译：我们报告了氮掺杂ZnO薄膜的合成和光致发光（PL）特性。这些膜是通过过滤阴极真空电弧技术合成的。氮气用作掺杂剂源。 X射线衍射结果表明ZnO薄膜是高度c轴取向的。氮相关的局部振动拉曼散射峰的出现表明氮被掺入薄膜中。在未掺杂膜的PL光谱中，观察到在384nm处的近带边缘激子发射峰和在660nm处的与氧间隙有关的弱可见带。对于掺杂氮的薄膜，除了在未掺杂样品中观察到两个发射带外，还在450和890 nm处检测到另外两个PL带。根据第一性原理总能量计算，氮诱导的受体能级位于价带最大值以上0.4eV。因此，在约450 nm处的发射带可能源自光生电子与中性氮受体的复合，而890 nm的谱带归因于电子从氧的间隙跃迁到中性氮受体。

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