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Influence of InGaAs overgrowth layer on structural and optical properties of InAs quantum dots

机译：InGaAs过生长层对InAs量子点结构和光学性质的影响

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摘要

Self-assembled InAs quantum dots (QDs) covered by In_(0.15)Ga_(0.85)As layer with different thickness were grown by molecular beam epitaxy and their structural and optical properties were investigated by transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. Cross-sectional TEM images showed that the shape of InAs QD, particularly the height, was controlled by changing the thickness of InGaAs overgrowth layer, thus changing the optical properties. The emission peak position of InAs QDs covered by 8.5nm In_(0.15)Ga_(0.85)As layer was 1.30 μm at room temperature with the energy-level spacing between the ground states and the first excited states of 80 meV, which is about 1.5 times larger than that of InAs QDs capped by GaAs layer. The longer emission wavelength with relatively larger energy-level spacing was related to the QD aspect ratio (height/width) that was confirmed by TEM images.
机译：通过分子束外延生长具有不同厚度的In_（0.15）Ga_（0.85）As层覆盖的自组装InAs量子点（QD），并通过透射电子显微镜（TEM）和光致发光（PL）研究其结构和光学性质光谱学。截面TEM图像显示通过改变InGaAs过生长层的厚度来控制InAs QD的形状，特别是高度，从而改变了光学性质。在室温下，被8.5nm In_（0.15）Ga_（0.85）As层覆盖的InAs QD的发射峰位置为1.30μm，基态与第一激发态之间的能级间距为80 meV，约为1.5倍于被GaAs层覆盖的InAs QD。具有相对较大能级间隔的较长发射波长与QD长宽比（高度/宽度）有关，这由TEM图像确认。

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