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首页> 外文期刊>Journal of Crystal Growth >Fabrication and characterization of indium-doped p-type SnO_2 thin films
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Fabrication and characterization of indium-doped p-type SnO_2 thin films

机译：铟掺杂p型SnO_2薄膜的制备与表征

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摘要

p-Type transparent SnO_2 thin films were successfully fabricated by sol-gel dip-coating method using indium as acceptor dopant. The prepared films were characterized by X-ray diffraction, Hall effect measurement, and UV-visible absorption. It was found from the XRD results that all the films with In/Sn≤0.4 were rutile-type structure. Hall effect measurement showed that the conduction type was dependent on the process temperature. For In/Sn≤0.2 and the process temperature above 450℃, the films were p-type, while for the process temperature ≤450℃, the films were n-type. It was found that 525℃ was the optimum processing temperature to obtain p-type SnO_2 with highest hole concentration. For In/Sn around 0.3, process temperature was very critical to the conducting type, and for n/Sn≥0.4, the film was n-type conducting.
机译：以铟为受体掺杂剂，通过溶胶-凝胶浸涂法成功制备了p型透明SnO_2薄膜。通过X射线衍射，霍尔效应测量和UV-可见吸收来表征所制备的膜。 X射线衍射结果表明，In /Sn≤0.4的所有薄膜均为金红石型结构。霍尔效应测量表明，导电类型取决于过程温度。 In /Sn≤0.2且加工温度高于450℃时，薄膜为p型；而In /Sn≤0.2且加工温度低于450℃时，薄膜为n型。发现525℃是获得最高空穴浓度的p型SnO_2的最佳工艺温度。对于大约0.3的In / Sn，工艺温度对于导电类型非常关键，对于n /Sn≥0.4，薄膜是n型导电。

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