Growth and characterization of the CdIn_2S_4/GaAs epilayers by hot wall epitaxy method

S.N. Baek; T.S. Jeong; C.J. Youn; K.J. Hong; J.S. Park; D.C. Shin; Y.T. Yoo

首页> 外文期刊>Journal of Crystal Growth >Growth and characterization of the CdIn_2S_4/GaAs epilayers by hot wall epitaxy method

【24h】

Growth and characterization of the CdIn_2S_4/GaAs epilayers by hot wall epitaxy method

机译：热壁外延法生长和表征CdIn_2S_4 / GaAs外延层

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The high-quality CdIn_2S_4 epilayers on the GaAs(100) substrate were first grown by using the Hot Wall Epitaxy Method. The grown CdIn_2S_4 epilayer was found to be the <110> direction. The optimum growth temperatures of the substrate and the source turned out to be 420℃ and 630℃, respectively. From the measurement of the temperature dependence of the Hall mobility, the scattering at the high-temperature range was mainly related to the acoustic mode of lattice vibration and the scattering at the low-temperature range was most pronounced due to the impurity effect. The temperature dependence of the energy band gap on the CdIn_2S_4/GaAs epilayer obtained from the optical absorption measurement was found to be E_g(T) = 2.7116 eV - (7.65 x 10~(-4) eV/K)T~2/(425 + T).

机译：首先通过热壁外延法在GaAs（100）衬底上生长高质量的CdIn_2S_4外延层。发现生长的CdIn_2S_4外延层是<110>方向。衬底和源的最佳生长温度分别为420℃和630℃。根据霍尔迁移率的温度依赖性的测量，在高温范围内的散射主要与晶格振动的声学模式有关，而在低温范围内的散射由于杂质效应而最明显。由光吸收测量得到的CdIn_2S_4 / GaAs外延层上的能带隙的温度依赖性为E_g（T）= 2.7116 eV-（7.65 x 10〜（-4）eV / K）T〜2 /（ 425 + T）。

著录项

来源
《Journal of Crystal Growth》 |2003年第4期|p.259-264|共6页
作者
S.N. Baek; T.S. Jeong; C.J. Youn; K.J. Hong; J.S. Park; D.C. Shin; Y.T. Yoo;
展开▼
作者单位

Division of Metallurgical and Material Science Engineering, Chosun University, Kwangju 501-759, South Korea;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Characterization; A3. Hot wall epitaxy: B2. Semiconducting ternary compounds;

机译：A1。表征;A3。热壁外延：B2。半导体三元化合物;

相似文献

外文文献
中文文献
专利

1. Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy [J] . Y.-M. Yu, D.-J. Kim, Y.D. Choi, Applied Surface Science . 2007,第7期

机译：热壁外延生长岩盐MnS / GaAs外延层及其表征
2. Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy [J] . Yu YM, Kim DJ, Eom SH, Journal of Crystal Growth . 2005,第1a2期

机译：热壁外延生长岩盐MnSe / GaAs外延层的结构特征
3. Growth and characterization of CuAlSe2(112)/GaAS(100) heteroepitaxial layers grown by hot wall epitaxy method [J] . You SH, Hong KJ, Jeong TS, Journal of Crystal Growth . 2006,第1期

机译：热壁外延生长CuAlSe2（112）/ GaAS（100）异质外延层的生长和表征
4. Growth and Optical Properties of ZnS_1-xTe_x epilayers by hot-wall epitaxy [C] . S.Nam, Y.-M.Yu, C.-K.Lee, International symposium on compound semiconductors . 1999

机译：热墙外延ZnS_1-XTE_X外延的生长和光学特性
5. Growth and defect characterization of low temperature molecular beam epitaxy GaAs. [D] . Zhao, Ri-an. 2002

机译：低温分子束外延GaAs的生长和缺陷表征。
6. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method [O] . Ying Wang, Zaixing Yang, Xiaofeng Wu, 2016

机译：双源CVD法制备高质量GaAs纳米线的生长和光伏性能
7. Growth and characterization of Zn1−xMnxTe epilayers grown by hot wall epitaxy on (001)GaAs substrates [O] . E. Abramof, A. Pesek, P. Juza, 1992

机译：热壁外延在（001）GaAs基材上生长的Zn1-XMnxte癫痫的生长和表征
8. Successful Molecular Beam Epitaxy Growth and Characterization of (110) GaAs/GaAs and (110) AlGaAs/GaAs [R] . Allen, L. P. 1987

机译：成功的分子束外延生长和（110）Gaas / Gaas和（110）alGaas / Gaas的表征

Growth and characterization of the CdIn_2S_4/GaAs epilayers by hot wall epitaxy method

摘要

著录项

相似文献

相关主题

期刊订阅