Metalorganic molecular beam epitaxy of ZnO using DEZn and H_2O precursors

Sho Shirakata; Keisuke Saeki; Tomoaki Terasako

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Metalorganic molecular beam epitaxy of ZnO using DEZn and H_2O precursors

机译：使用DEZn和H_2O前驱体对ZnO进行金属有机分子束外延

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Metalorganic molecular beam epitaxy (MOMBE) growth of ZnO was carried out on the c-plane of sapphire substrate using diethylzinc (DEZn) and H_2O as source precursors. ZnO layers were grown at substrate temperature (T_s) between 200 deg C and 550 deg C. The c-axis oriented epitaxial ZnO layers were grown at T_s between 375 deg C and 400 deg C. Photoluminescence (PL) spectra at 8 K exhibited the neutral donor bound exciton peak at 3.36 eV. The PL intensity was maximum and the half-width was minimum (7 meV) for T_s of about 400 deg C. These results showed that the quality of the ZnO layer grown by this MOMBE system was best at T_s of about 400 deg C.

机译：以二乙基锌（DEZn）和H_2O为源前驱体，在蓝宝石衬底的c面上进行了ZnO的金属有机分子束外延（MOMBE）生长。 ZnO层在200摄氏度至550摄氏度之间的衬底温度（T_s）下生长。c轴取向外延ZnO层在375摄氏度至400摄氏度之间的T_s范围内生长。在8 K的光致发光（PL）光谱显示出中性供体结合的激子峰位于3.36 eV。对于约400摄氏度的T_s，PL强度最大，半峰宽最小（7 meV）。这些结果表明，由该MOMBE系统生长的ZnO层的质量在约400摄氏度的T_s处最佳。

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来源
《Journal of Crystal Growth》 |2002年第2002期|p.528-532|共5页
作者
Sho Shirakata; Keisuke Saeki; Tomoaki Terasako;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Chemical beam epitaxy; A3. Metalorganic molecular beam epitaxy; B1. Oxides; B1. Zinc compounds;

机译：A3。化学束外延;A3。金属有机分子束外延;B1。氧化物;B1。锌化合物;

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Metalorganic molecular beam epitaxy of ZnO using DEZn and H_2O precursors

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