Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

Lin Cheng; Anant K. Agarwal; Sarit Dhar; Sei-Hyung Ryu; John W. Palmour

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Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

机译：在−187°C至300°C的温度下20 A，1200 V 4H-SiC功率MOSFET的静态性能

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Silicon carbide (4H-SiC) power metal–oxide–semiconductor field-effect transistors (MOSFETs) have been attracting tremendous attention for high-power applications at a wide range of operating temperatures, owing to their normally-off characteristics, high-speed switching operation, avalanche capability, and low on-resistance. To optimize performance of 4H-SiC MOSFETs for various applications at different temperatures, it is important to understand the mechanisms of temperature dependence of the key parameters, such as on-resistance, threshold voltage, and metal–oxide–semiconductor (MOS) channel mobility. We report on the temperature dependence of the on-resistance of 20 A, 1200 V 4H-SiC power MOSFETs for temperatures ranging from −187°C to 300°C. The MOSFET showed normally-off characteristics throughout the entire experimental temperature range. Different temperature dependences of the total on-resistance in different temperature regimes have been observed. Due to the poor MOS channel mobility and the low free carrier concentration in the inversion channel of the 4H-SiC MOSFET, the MOS channel resistance is the dominant part of the total on-resistance. This was also found to be true in a 4H-SiC long-channel lateral MOSFET.

机译：碳化硅（4H-SiC）功率金属氧化物半导体场效应晶体管（MOSFET）由于具有常关特性，高速开关特性，因此已在宽工作温度范围内引起了大功率应用的极大关注操作，雪崩能力和低导通电阻。为了在不同温度下针对各种应用优化4H-SiC MOSFET的性能，重要的是要了解关键参数（例如导通电阻，阈值电压和金属氧化物半导体（MOS）沟道迁移率）的温度依赖性机制。我们报道了温度范围为-187°C至300°C的20 A，1200 V 4H-SiC功率MOSFET的导通电阻与温度的关系。 MOSFET在整个实验温度范围内均显示常关特性。已经观察到在不同温度范围内总导通电阻的不同温度依赖性。由于4H-SiC MOSFET的反向沟道中的MOS沟道迁移率差和自由载流子浓度低，因此MOS沟道电阻是总导通电阻的主要部分。在4H-SiC长沟道横向MOSFET中也是如此。

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来源
《Journal of Electronic Materials》 |2012年第5期|p.910-914|共5页
作者
Lin Cheng; Anant K. Agarwal; Sarit Dhar; Sei-Hyung Ryu; John W. Palmour;
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作者单位

Cree Inc., 4600 Silicon Drive, Durham, NC, 27703, USA;

Cree Inc., 4600 Silicon Drive, Durham, NC, 27703, USA;

Cree Inc., 4600 Silicon Drive, Durham, NC, 27703, USA;

Cree Inc., 4600 Silicon Drive, Durham, NC, 27703, USA;

Cree Inc., 4600 Silicon Drive, Durham, NC, 27703, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
SiC; power MOSFET; MOS channel mobility; inversion-layer electron mobility; inversion-channel free carrier concentration; interface; interface traps; on-resistance; specific on-resistance; temperature dependence;

机译：SiC;功率MOSFET;MOS沟道迁移率;反型层电子迁移率;反型沟道自由载流子浓度;界面;界面陷阱;导通电阻;比导通电阻;温度依赖性;

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专利

1. Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of -187 deg C to 300 deg C [J] . LIN CHENG, ANANT K. AGARWAL, SARIT DHAR, Journal of Electronic Materials . 2012,第5期

机译：在-187摄氏度至300摄氏度的温度下20 A，1200 V 4H-SiC功率MOSFET的静态性能
2. High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs [J] . Lin Cheng, Sei-Hyung Ryu, Anant K. Agarwal, Materials science forum . 2012,第PTa2期

机译：1200 V，200 A 4H-SiC功率DMOSFET的高温性能
3. Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications [J] . Donald A. Gajewski, Sei-Hyung Ryu, Mrinal Das, Materials science forum . 2014,第pta2期

机译：1200 V和1700 V 4H-SiC DMOSFET在下一代功率转换应用中的可靠性能
4. High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs [C] . Lin Cheng, Sei-Hyung Ryu, Anant K. Agarwal, ICSCRM 2011;International conference on silicon carbide and related materials . 2012

机译：1200 V，200 A 4H-SiC功率DMOSFET的高温性能
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. Multi-objective optimization of MOSFETs channel widths and supply voltage in the proposed dual edge-triggered static D flip-flop with minimum average power and delay by using fuzzy non-dominated sorting genetic algorithm-II [O] . Farshid Keivanian, Nasser Mehrshad, Abolfazl Bijari -1

机译：拟议的双边沿触发静态D型触发器中的MOSFET沟道宽度和电源电压的多目标优化采用模糊非支配排序遗传算法II
7. 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications [O] . Dethard Peters, Reinhold Schörner, Peter Friedrichs, 2015

机译：4H-siC功率mOsFET阻断1200V，采用与工业应用兼容的栅极技术
8. Electrical and Thermal Performance of 1200 V, 100 A, 200 deg C, 4H-SiC MOSFET-based Power Switch Modules [R] . Scofield, J., Merrett, N., Richmond, J., 2009

机译：基于1200 V，100 a，200°C，4H-siC mOsFET的电源开关模块的电气和热性能

Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

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