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首页> 外文期刊>Journal of Electronic Packaging >Effect of the Crystallinity on the Electromigration Resistance of Electroplated Copper Thin-Film Interconnections
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Effect of the Crystallinity on the Electromigration Resistance of Electroplated Copper Thin-Film Interconnections

机译：结晶度对电镀铜薄膜互连电渗透性的影响

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摘要

Dominant factors of electromigration (EM) resistance of electroplated copper thin-film interconnections were investigated from the viewpoint of temperature and crystallinity of the interconnection. The EM test under the constant current density of mA/cm~2 was performed to observe the degradation such as accumulation of copper atoms and voids. Formation of voids and the accumulation occurred along grain boundaries during the EM test, and finally the interconnection was fractured at the not cathode side but at the center part of the interconnection. From the monitoring of temperature of the interconnection by using thermography during the EM test, this abnormal fracture was caused by large Joule heating of itself under high current density. In order to investigate the effect of grain boundaries on the degradation by EM, the crystallinity of grain boundaries in the interconnection was evaluated by using image quality (IQ) value obtained from electron backscatter diffraction (EBSD) analysis. The crystallinity of grain boundaries before the EM test had wide distribution, and the grain boundaries damaged under the EM loading mainly were random grain boundaries with low crystallinity. Thus, high density of Joule heating and high-speed diffusion of copper atoms along low crystallinity grain boundaries accelerated the EM degradation of the interconnection. The change of Joule heating density and activation energy for the EM damage were evaluated by using the interconnection annealed at 400°C for 3 h. The annealing of the interconnection increased not only average grain size but also crystallinity of grains and grain boundaries drastically. The average IQ value of the interconnection was increased from 4100 to 6200 by the annealing. The improvement of the crystallinity decreased the maximum temperature of the interconnection during the EM test and increased the activation energy from 0.72 eV to 1.07 eV. The estimated lifetime of interconnections is increased about 100 times by these changes. Since the atomic diffusion is accelerated by not only the current density but also temperature and low crystallinity grain boundaries, the lifetime of the interconnections under EM loading is a strong function of their crystallinity. Therefore, it is necessary to evaluate and control the crystallinity of interconnections quantitatively using IQ value to assure their long-term reliability.
机译：从互连的温度和结晶性的观点来看，研究了电镀铜薄膜互连的电迁移（EM）电阻的主导因素。进行MA / CM〜2的恒定电流密度下的EM测试以观察诸如铜原子和空隙的累积等劣化。在EM试验期间形成空隙和积累沿晶界发生，最后互连在不阴极侧，但在互连的中心部分处被破裂。通过在EM试验期间使用热成像监测互连的温度，这种异常骨折是在高电流密度下大的焦耳加热引起的。为了探讨晶界对EM的降解的影响，通过使用从电子反向散射衍射（EBSD）分析获得的图像质量（IQ）值来评价互连中的晶界的结晶度。在EM试验之前的晶界结晶度具有广泛的分布，并且在EM负载下损坏的晶界主要是随机晶界，具有低结晶度。因此，沿着低结晶度晶界的高密度焦耳加热和铜原子的高速扩散加速了互连的EM劣化。通过使用在400℃下退火3小时的互连来评估焦耳加热密度和EM损伤的激活能量的变化。互连的退火不仅增加了平均晶粒尺寸，而且增加了颗粒和晶界的结晶度。通过退火，互连的平均IQ值从4100增加到6200。结晶度的改善降低了EM试验期间互连的最高温度，并将活化能量从0.72 EV增加到1.07eV。这些变化估计互联的寿命约为100次。由于原子扩散不仅通过电流密度而且温度和低结晶度晶粒边界而加速，因此EM负载下的互连的寿命是它们的结晶度的强函数。因此，必须使用IQ值定量地评估和控制互连的结晶度，以确保它们的长期可靠性。

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  • 来源
    《Journal of Electronic Packaging》 |2017年第2期|020911.1-020911.7|共7页
  • 作者

    Takeru Kato; Ken Suzuki; Hideo Miura;

  • 作者单位

    Department of Finemechanics Graduate School of Engineering Tohoku University 6-6-11-716 Aoba Aramaki Aobaku Sendai Miyagi 980-8579 Japan;

    Fracture and Reliability Research Institute Graduate School of Engineering Tohoku University 6-6-11-716 Aoba Aramaki Aobaku Sendai Miyagi 980-8579 Japan;

    Fracture and Reliability Research Institute Graduate School of Engineering Tohoku University 6-6-11-716 Aoba Aramaki Aobaku Sendai Miyagi 980-8579 Japan;

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