Physical Modeling of Traveling-Wave Heterojunction Phototransistors

Rangel-Sharp G.; Miles R. E.; Iezekiel S.

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Physical Modeling of Traveling-Wave Heterojunction Phototransistors

机译：行波异质结光电晶体管的物理建模

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The set of classical drift-diffusion device equations has been applied to fully distributed traveling-wave heterojunction phototransistor structures (TW-HPTs). The two-dimensional physical modeling includes an equivalent circuit transmission-line solver in common with previous approaches to analyze traveling-wave devices. The addition of a full physical model has shown for the first time the potential RC limitations that still exist for transistor structures in the traveling-wave regime. While efforts can be made to reduce these limitations, they all have their drawbacks. As such we propose that the use of HPT gain is better suited to periodically distributed traveling-wave devices.

机译：这套经典的漂移扩散装置方程已应用于完全分布的行波异质结光电晶体管结构（TW-HPT）。二维物理建模包括与分析行波设备的先前方法相同的等效电路传输线求解器。完整的物理模型的添加首次显示了行波状态下晶体管结构仍然存在的潜在RC限制。尽管可以努力减少这些限制，但它们都有缺点。因此，我们建议使用HPT增益更适合周期性分布的行波设备。

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《Journal of Lightwave Technology》 |2008年第13期|p.1943-1949|共7页
作者
Rangel-Sharp G.; Miles R. E.; Iezekiel S.;
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正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Phototransistors; semiconductor device modeling; traveling-wave devices;

机译：光电晶体管;半导体器件建模;行波器件;

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Physical Modeling of Traveling-Wave Heterojunction Phototransistors

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