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Band gap-tuned MoS_(2(1-x))Te_(2x)thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process

机译:带隙调谐的MoS_(2(1-x))Te_(2x)薄膜通过混合共溅射和沉积后碲化退火工艺合成

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摘要

MoS2(1-x)Te2x thin films were fabricated by high-temperature co-sputtering deposition and post-deposition tellurization annealing using novel Te precursor (i-C3H7)2Te for the first time. As a result, high crystal quality MoS2(1-x)Te2x (6.5 nm) were successfully fabricated with the Te concentration x ranging from 0.48 to 0.61 and band gap value from 0.80 to 0.87 eV. From the obtained band gap values of MoS2(1-x)Te2x, the bowing parameter b was determined to be 1.06 eV. When exploited in device use, if the required band gap value is known, the required composition can be calculated with the bowing parameter. We have also shown the compatibility of co-sputtering to alloy fabrication since the composition ratio can be easily controlled just by adjusting the radio frequency (RF) sputter power on different targets. The fabrication method can be applied to different transition metal dichalcogenide materials as well.
机译:MoS2(1-x)Te2x薄膜是通过高温共溅射沉积和沉积后碲化退火首次使用新型Te前驱体(i-C3H7)2Te制备的。结果,成功地制造了高晶体质量的MoS2(1-x)Te2x(6.5 nm),其Te浓度x在0.48至0.61之间,带隙值在0.80至0.87 eV之间。从获得的MoS2(1-x)Te2x的带隙值,弯曲参数b被确定为1.06eV。当用于设备使用时,如果所需的带隙值已知,则可以使用弯曲参数计算所需的成分。我们还显示了共溅射与合金制造的兼容性,因为仅通过调整不同靶材上的射频(RF)溅射功率就可以轻松控制组成比。该制造方法也可以应用于不同的过渡金属二硫化二氢材料。

著录项

  • 来源
    《Journal of Materials Research》 |2017年第16期|3021-3028|共8页
  • 作者单位

    School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;

    School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;

    School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;

    School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken, Japan;

    School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken, Japan;

    Gas-Phase Growth Ltd., Tokyo University of Agriculture and Technology, Koganei-shi, Tokyo-to, Japan;

    School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken, Japan;

    School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    alloy; sputtering; X-ray photoelectron spectroscopy;

    机译:合金;溅射X射线光电子能谱;

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