机译:带隙调谐的MoS_(2(1-x))Te_(2x)薄膜通过混合共溅射和沉积后碲化退火工艺合成
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken, Japan;
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken, Japan;
Gas-Phase Growth Ltd., Tokyo University of Agriculture and Technology, Koganei-shi, Tokyo-to, Japan;
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken, Japan;
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken, Japan;
alloy; sputtering; X-ray photoelectron spectroscopy;
机译:单层三元过渡金属二硫基酯MOS_(2x)TE_(2(1-x))的机械性能:分子动力学研究
机译:退火对共溅射Bi_(0.5)Sb_(1.5)Te_(3.0)薄膜的结构和电输运性能的影响
机译:具有可调直接带隙的二维过渡金属双硫族化物:MoS_(2(1-x)Se_(2x)单层
机译:MOS_(2(1-x))TE_(2x)混合晶体带结构的评估
机译:通过控制退火实验研究异质外延Si(1-x)Ge(x)薄膜的形态不稳定性和缺陷形成
机译:沉积后退火环境对氮化镓上射频磁控溅射Y2O3薄膜能带取向的影响
机译:Cd 1-x Zn x S合金组成和沉积后空气退火对MOCVD生产的超薄CdTe太阳能电池的影响
机译:室温薄膜Ba(x)sr(1-x)TiO3 Ku波段耦合微带相移器:膜厚度,掺杂,退火和基板选择的影响