机译:通过X射线光电子衍射,具有极性{0001}和半极性{1011},{2021},{1122}取向的GaN极性
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Prague, Czech Republic;
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Prague, Czech Republic;
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA;
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Prague, Czech Republic;
机译:半极性纤锌矿晶体的极性:来自GaN {1011}和GaN {2021}表面的X射线光电子衍射
机译:在(1122)半极性和(0001)极性平面上生长的InGaN / GaN发光二极管的场相关载流子动力学和发射动力学的比较研究
机译:通过价带光发射光谱法确定极性和半极性(1122)InN和GaN层的极性
机译:六角形GaN(0001)薄膜的X射线光电子衍射研究
机译:通过发光光谱和X射线衍射测定在6H-SiC(0001)衬底上生长的GaN和Al(x)Ga(1-x)N薄膜的应变和组成。
机译:角分辨X射线光电子能谱研究Al2O3封端的GaN / AlGaN / GaN异质结构的表面极化
机译:在(11 2-2)半极性和(0001)极性平面上生长的InGaN / GaN发光二极管的场相关载流子动力学和发射动力学的比较研究