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首页> 外文期刊>Journal of Materials Research >Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al_2O_3 by using flux- and temperature-modulated techniques
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Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al_2O_3 by using flux- and temperature-modulated techniques

机译：利用光通量和温度调制技术在c-Al_2O_3上生长的PA MBE AlGaN量子阱异质结构的结构和光学性质

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摘要

AlGaN-based quantum well (QW) heterostructures grown by plasma-assisted molecular beam epitaxy on c-Al_2O_3 substrates have been studied. The high-temperature (785 ℃) synthesis of AlN buffer layer nucleated by a migration-enhanced epitaxy and including several ultrathin GaN interlayers was the optimum approach for lowering the threading dislocations density down to 10~8-10~9 cm~(-2). High-angle annular dark-field scanning transmission electron microscopy (HAADF STEM) has revealed the step-like roughness of the AlN/Al_2O_3 interface. Also, the formation of Al-rich barriers induced by temperature-modulated epitaxy and the spontaneous compositional disordering have been found in the Al_xGa_(1-x)N (x ＞ 0.6) barrier layers. The origin of these phenomena and their influence on parameters of the mid-UV stimulated emission observed in the QW heterostructures were discussed. The fine structure of the QWs formed by a submonolayer digital alloying technique has been displayed by HAADF STEM, and optical properties of the QW structures were studied by temperature- and time-dependent photoluminescence spectroscopy.
机译：研究了等离子体辅助分子束外延在c-Al_2O_3衬底上生长的基于AlGaN的量子阱（QW）异质结构。通过迁移增强的外延成核并包括几个超薄GaN中间层的AlN缓冲层的高温（785℃）合成是将穿线位错密度降低至10〜8-10〜9 cm〜（-2）的最佳方法）。高角度环形暗场扫描透射电子显微镜（HAADF STEM）揭示了AlN / Al_2O_3界面的阶梯状粗糙度。同样，在Al_xGa_（1-x）N（x＞ 0.6）阻挡层中发现了由温度调节外延和自发的成分无序形成的富Al阻挡层的形成。讨论了这些现象的起源及其对在QW异质结构中观察到的中紫外激发发射参数的影响。通过亚单层数字合金化技术形成的QW的精细结构已通过HAADF STEM进行了展示，并且通过与温度和时间相关的光致发光光谱研究了QW结构的光学性质。

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  • 来源
    《Journal of Materials Research》 |2015年第19期|2871-2880|共10页
  • 作者

    Valentin N. Jmerik; Dmitrii V. Nechaev; Sergey Rouvimov; Valentin V. Ratnikov; Peter S. Kopev; Mikolai V. Rzheutski; Eugenii V. Lutsenko; Gennadii P. Yablonskii; Maher Aljohenii; Abdulaziz Aljerwii; Ahmed Alyamani; Sergey V. Ivanov;

  • 作者单位

    Ioffe Institute, Centre of Nanoheterostructure Physics, St. Petersburg 194021, Russia;

    Ioffe Institute, Centre of Nanoheterostructure Physics, St. Petersburg 194021, Russia;

    Ioffe Institute, Centre of Nanoheterostructure Physics, St. Petersburg 194021, Russia University of Notre Dame, Notre Dame, Indiana 46556, USA;

    Ioffe Institute, Centre of Nanoheterostructure Physics, St. Petersburg 194021, Russia;

    Ioffe Institute, Centre of Nanoheterostructure Physics, St. Petersburg 194021, Russia;

    Stepanov Institute of Physics of NAS Belarus, Minsk 220072, Belarus;

    Stepanov Institute of Physics of NAS Belarus, Minsk 220072, Belarus;

    Stepanov Institute of Physics of NAS Belarus, Minsk 220072, Belarus;

    KACST, National Nanotechnology Center, 11442 Riyadh, Saudi Arabia;

    KACST, National Nanotechnology Center, 11442 Riyadh, Saudi Arabia;

    KACST, National Nanotechnology Center, 11442 Riyadh, Saudi Arabia;

    Ioffe Institute, Centre of Nanoheterostructure Physics, St. Petersburg 194021, Russia;

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