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Symmetrically abrupt GaN/AlGaN superlattices by alternative interface-interruption scheme

机译:通过交替界面中断方案对称地突变GaN / AlGaN超晶格

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摘要

We report an alternative interruption scheme to effectively improve the abruptness of GaN/AlGaN superlattices by minimizing the asymmetric feature of different types of heterointerfaces. It is found by x-ray diffraction that the interface abruptness is degraded and the GaN thickness is reduced with the interruption time increasing. Detailed investigation with scanning transmission electron microscopy demonstrates that the A1 diffusion and the interface etching effect at the GaN/AlGaN interface are the critical reasons leading to the interfacial asymmetry. An alternative interface-interruption scheme is then proposed to enhance the abruptness of the superlattice interfaces, and consequently, the emission efficiency can also be significantly enhanced.
机译:我们报告了一种替代的中断方案,可通过最小化不同类型异质界面的不对称特征来有效提高GaN / AlGaN超晶格的突变率。通过X射线衍射发现,随着中断时间的增加,界面突变性降低并且GaN厚度减小。扫描透射电子显微镜的详细研究表明,Al扩散和GaN / AlGaN界面处的界面蚀刻效应是导致界面不对称的关键原因。为了提高超晶格界面的突变性,提出了一种替代性的界面打断方案,从而可以显着提高发射效率。

著录项

  • 来源
    《Journal of Materials Research》 |2013年第5期|716-722|共7页
  • 作者单位

    Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;

    Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;

    Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;

    Technology Department, Xiamen Changelight Co., Ltd, Xiamen 361005, China;

    Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;

    Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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