机译:通过交替界面中断方案对称地突变GaN / AlGaN超晶格
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;
Technology Department, Xiamen Changelight Co., Ltd, Xiamen 361005, China;
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University,Xiamen 361005, China;
机译:通过消除不对称扩散来改善AlGaN / GaN超晶格界面的突变性
机译:使用AlN / GaN超晶格作为准AlGaN势垒的AlGaN / GaN异质结构中改善的电性能
机译:使用对称和不对称X射线方案估算AlGaN / GaN异质结构缓冲层的晶体结构
机译:GaN / InGaN / GaN和AlGan / gAn / AlGaN HBT中的基跃迁时间
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:Mg Delta掺杂AlGaN / GaN超晶格结构增强了P型GaN电导率
机译:通过消除不对称扩散来改善AlGaN / GaN超晶格界面的突变性
机译:GaN / alGaN超晶格中的太赫兹生成