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首页> 外文期刊>Journal of Materials Research >Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si_(1-x)Ge_x layers on Si(100) after rapid thermal annealing
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Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si_(1-x)Ge_x layers on Si(100) after rapid thermal annealing

机译：快速热退火后Si（100）上外延薄Si_（1-x）Ge_x层中Ge扩散和Si应力变化的显微拉曼表征

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摘要

Boron-doped, single (～54 nm) or double (～21 + 54 nm) Si_(1-x)Ge_x layers were epitaxially grown on 300-mm-diameter p--Si(100) device wafers with 20 nm technology node design features, by ultrahigh vacuum chemical vapor deposition. The Si_(1-x)Ge_x/Si wafers were annealed in the temperature range of 950-1050 ℃ for 60 s to investigate the effect of annealing on possible changes of Ge content and Si stress near the Si_(1-x)Ge_x/Si interface. High spectral resolution, micro-Raman spectroscopy was used as a nondestructive characterization technique with five excitation wavelengths of 363.8, 441.6, 457.9, 488.0, and 514.5 nm. Ge diffusion and generation of compressive stress at the Si_(1-x)Ge_x/Si interface were measured on all annealed wafers. Ge diffusion and the accumulation of compressive Si stress after annealing showed significantly different behaviors between single-and double-layer Si_(1-x)Ge_x/Si wafers. Raman characterization results were compared with secondary ion mass spectroscopy and high-resolution x-ray diffraction results.
机译：在具有20 nm技术节点的直径300 mm的p--Si（100）器件晶圆上外延生长掺硼的单层（〜54 nm）或双层（〜21 + 54 nm）Si_（1-x）Ge_x层设计特点，通过超高真空化学气相沉积。将Si_（1-x）Ge_x / Si晶片在950-1050℃的温度范围内退火60 s，以研究退火对Si_（1-x）Ge_x /附近Ge含量和Si应力可能变化的影响Si接口。高光谱分辨率，微拉曼光谱法被用作无损表征技术，具有五个激发波长分别为363.8、441.6、457.9、488.0和514.5 nm。在所有退火晶片上测量了Ge扩散和Si_（1-x）Ge_x / Si界面处的压应力的产生。在单层和双层Si_（1-x）Ge_x / Si晶片之间，退火后的Ge扩散和Si压缩应力的累积表现出显着不同的行为。拉曼表征结果与二次离子质谱和高分辨率X射线衍射结果进行了比较。

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  • 来源
    《Journal of Materials Research》 |2012年第9期|p.1314-1323|共10页
  • 作者

    Chun-Wei Chang; Min-Hao Hong; Wei-Fan Lee; Kuan-Ching Lee; Li-De Tseng; Yi-Hann Chen; Yen Chuang; Yu-Ta Fan; Takeshi Ueda; Toshikazu Ishigaki; Kitaek Kang; Woo Sik Yoo;

  • 作者单位

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China;

    WaferMasters, Inc., San Jose, California 95112;

    WaferMasters, Inc., San Jose, California 95112;

    WaferMasters, Inc., San Jose, California 95112;

    WaferMasters, Inc., San Jose, California 95112;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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