Illumination instabilities in ZnO/HfO_2 thin-film transistors and influence of grain boundary charge

Jeffrey J. Siddiqui; Jamie D. Phillips; Kevin Leedy; Burhan Bayraktaroglu

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Illumination instabilities in ZnO/HfO_2 thin-film transistors and influence of grain boundary charge

机译：ZnO / HfO_2薄膜晶体管的照明不稳定性和晶界电荷的影响

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The illumination instabilities of nanocrystalline ZnO thin-film transistors (TFT) with HfO2 gate dielectrics are reported via zero gate bias multiwave length illumination stress method. TFT I_D-V_G curves exhibit a negative threshold voltage shift together with an increase in I_D off current and increase in subthreshold slope with increasing photon energy and illumination time. Analysis of transistor characteristics indicates that one component governing negative threshold voltage shifts is a decrease in grain boundary-trapped charge areal density due to illumination. This relationship can be explained by conduction based on thermionic emission over potential barriers formed at the ZnO crystallite boundaries. I_D off-state current trends with photon energy in a manner consistent with exponentially decreasing absorption below the conduction band edge.

机译：通过零栅偏压多波长照明应力法报道了具有HfO2栅介质的纳米ZnO薄膜晶体管的发光不稳定性。 TFT I_D-V_G曲线显示负阈值电压漂移，I_D关断电流增加，亚阈值斜率随着光子能量和照明时间的增加而增加。晶体管特性分析表明，控制负阈值电压漂移的一个因素是由于照明导致晶界陷阱电荷面积密度的降低。这种关系可以通过基于在ZnO微晶边界处形成的势垒上的热电子发射进行传导来解释。 I_D截止态电流随光子能量的变化趋势与在导带边缘以下吸收呈指数下降的方式一致。

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来源
《Journal of Materials Research》 |2012年第17期|p.2199-2204|共6页
作者
Jeffrey J. Siddiqui; Jamie D. Phillips; Kevin Leedy; Burhan Bayraktaroglu;
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作者单位

Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, Michigan 48109;

Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, Michigan 48109;

Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433;

Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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2. Charge Transport Model Based on Single-Layered Grains and Grain Boundaries for Polycrystalline Pentacene Thin-Film Transistors [J] . Yuanyuan Hu, Liangmin Wang, Qiong Qi The journal of physical chemistry, C. Nanomaterials and interfaces . 2011,第47期

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Illumination instabilities in ZnO/HfO_2 thin-film transistors and influence of grain boundary charge

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