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首页> 外文期刊>Journal of Materials Research >On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide
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On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide

机译：热处理对氢化非晶态碳氧化硅的组成，结构，形态和光学性质的影响

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摘要

The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiC_xO_yH_z) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiC_xO_yH_z films, namely, SiC-like (SiC_(1.08)O_(0.07)H_(0.21)), Si-C-O (SiC_(0.50)O_(1.20)H_(0.22)), and SiO_2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 ℃ to 1100 ℃ for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC_(0.5)O_(1.0)Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC_(0.5)O_(1.0):Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.
机译：研究了氢化非晶硅碳氧化物（a-SiC_xO_yH_z）材料的组成，结构，形态和光学特性，其与实验处理条件和沉积后热处理的关系。热化学气相沉积（TCVD）用于生长三种不同类型的a-SiC_xO_yH_z膜，即类SiC（SiC_（1.08）O_（0.07）H_（0.21）），Si-CO（SiC_（0.50） O_（1.20）H_（0.22））和类SiO_2（SiC0.20O1.70H0.24）。随后将所得膜在氩气氛中在500℃至1100℃的温度下退火1小时。通过傅立叶变换红外光谱（FTIR），X射线光电子能谱（XPS），卢瑟福背散射光谱（RBS），核反应分析（NRA）表征了沉积后和退火后膜的组成，结构和形态。和扫描电子显微镜。相应的光学性质通过光谱紫外可见椭圆仪（UV-VIS-SE）评估。这些研究导致确定了用于生长Er掺杂的碳氧化硅（SiC_（0.5）O_（1.0）Er）薄膜的最佳工艺窗口，该薄膜具有很强的室温光致发光发射，在宽（460 nm至600 nm）波段。关联的建模研究表明，SiC_（0.5）O_（1.0）：Er基质中Er激发的有效截面比对Er离子直接光学激发的模拟物大大约四个数量级。

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  • 来源
    《Journal of Materials Research》 |2009年第8期|2561-2573|共13页
  • 作者

    Spyros Gallis; Vasileios Nikas; Eric Eisenbraun; Mengbing Huang; Alain E. Kaloyeros;

  • 作者单位

    College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203;

    College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203;

    College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203;

    College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203;

    College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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