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首页> 外文期刊>Journal of Materials Research >Sputtered Nb- and Ta-doped TiO_2 transparent conducting oxide films on glass
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Sputtered Nb- and Ta-doped TiO_2 transparent conducting oxide films on glass

机译：在玻璃上溅射Nb和Ta掺杂的TiO_2透明导电氧化物膜

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Radio frequency (rf) magnetron sputtering is used to deposit Ti_(0.85)Nb_(0.15)O_2 and Ti_(0.8)Ta_(0.2)O_2 films on glass substrates at substrate temperatures (Ts) ranging from ～ 250 to 400℃. The most conducting Nb-doped TiO_2 films were deposited at Ts = 370℃, with conductivities of ～ 60 S/cm, carrier concentrations of 1.5 × 10~21 cm~(-3) and mobilities ＜ 1 cm~2/V·s. The conductivity of the films was limited by the mobility, which was more than 10 times lower than the mobility for films deposited epitaxially on SrTiO_3. The difference in properties is likely caused by the randomly oriented crystal structure of the films deposited on glass compared with biaxially textured films deposited on SrTiO_3. The anatase phase could not be stabilized in the Ta-doped TiO_2 films, likely because of the high dopant concentration.
机译：射频（rf）磁控溅射用于在基板温度（Ts）〜250至400℃范围内在玻璃基板上沉积Ti_（0.85）Nb_（0.15）O_2和Ti_（0.8）Ta_（0.2）O_2膜。导电性最强的Nb掺杂TiO_2薄膜在Ts = 370℃下沉积，电导率为〜60 S / cm，载流子浓度为1.5×10〜21 cm〜（-3），迁移率小于1 cm〜2 / V·s 。薄膜的电导率受迁移率的限制，比外延沉积在SrTiO_3上的薄膜的迁移率低10倍以上。与沉积在SrTiO_3上的双轴织构薄膜相比，沉积在玻璃上的薄膜的随机取向晶体结构可能会导致性能差异。在Ta掺杂的TiO_2薄膜中，锐钛矿相不能稳定，这可能是由于高掺杂浓度引起的。

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