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首页> 外文期刊>Journal of Materials Research >Interfacial-shear strength of the perfluorocyclobutane films on silicon
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Interfacial-shear strength of the perfluorocyclobutane films on silicon

机译：硅上全氟环丁烷薄膜的界面剪切强度

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摘要

The debonding behavior of perfluorocyclobutane (PFCB) films on silicon (Si) has been investioated using Vickers indentation as a function of cure temperature and film thickness. PFCB films on Si were processed by spin coating (1-4 mu m) and solution casting (20-60 mu m). The interfacial shear strength of solution-cast PFCB films was independent of film thickness. The interfacial shear strength increased with cure temperature. The PFCB/Si cured at 225 degrees C exhibited interfacial shear strength of 123 MPa, and the strength increased to 163 MPa when the cure temperature was raised to 275 degrees C. The increase in interfacial-shear strength with temperature has been attributed to the increase in the density of bonds between PFCB and Si due to an increase in the density of crosslinks. Spin-coated films exhibited cracking due to the penetration of the indenter into the substrate, and the extent of cracking increased with the load.
机译：全氟环丁烷（PFCB）膜在硅（Si）上的脱键行为已使用维氏压痕作为固化温度和膜厚的函数进行了研究。通过旋涂（1-4微米）和溶液浇铸（20-60微米）对Si上的PFCB薄膜进行处理。溶液浇铸的PFCB薄膜的界面剪切强度与薄膜厚度无关。界面剪切强度随固化温度的增加而增加。在225℃固化的PFCB / Si表现出123 MPa的界面剪切强度，并且当固化温度升高至275℃时强度增加至163 MPa。界面剪切强度随温度的升高归因于其增加由于交联密度的增加，PFCB和Si之间的键密度降低了。旋涂膜由于压头渗透到基材中而显示出开裂，并且开裂的程度随负载而增加。

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