Coherent island formation of Cu_2O films grown by chemical vapor deposition on MgO(110)

P. R. Markworth; X. Liu; J. Y. Dai

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Coherent island formation of Cu_2O films grown by chemical vapor deposition on MgO(110)

机译：在MgO（110）上化学气相沉积法生长的Cu_2O薄膜的相干岛形成

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Cuprous oxide (Cu_2O) films have been grown on single-crystal MgO9110) substrates by a chemical vapor deposition process in the temperature range 690-790 deg. C. X-ray diffraction measurements show that phase-pure, highly oriented Cu_2O films form at these temperatures.

机译：通过化学气相沉积工艺在690-790度的温度范围内，在单晶MgO9110上生长了氧化亚铜（Cu_2O）膜。 C. X射线衍射测量表明在这些温度下会形成纯相，高度取向的Cu_2O膜。

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《Journal of Materials Research》 |2001年第8期|p.2408-2414|共7页
作者
P. R. Markworth; X. Liu; J. Y. Dai;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
中图分类工程材料学;
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Coherent island formation of Cu_2O films grown by chemical vapor deposition on MgO(110)

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