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首页> 外文期刊>Journal of Materials Research >Processing magnetoresistive thin films via chemical solution deposition
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Processing magnetoresistive thin films via chemical solution deposition

机译：通过化学溶液沉积处理磁阻薄膜

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摘要

A chemical solution deposition (CSD) procedure was used to prepare epitaxial lanthanum calcium manganese oxide (LCMO) thin films on (100) SrTiO_3 single-crystal substrates. The colossal magnetoresistance (CMR) properties of the films were found to be comparable to those processed with vacuum deposition techniques and to bulk samples. The (200) LCMO d-spacing and insulator-metal transition temperature (TIM) were measured for films heat-treated at different temperatures, partial pressures of O_2, and different times. The variations observed suggest a direct link between lattice parameter and TIM, as can be understood through their mutual dependence on the Mn_4+/Mn_3+ ratio. The measurements also suggest that film and powder samples crystallize Mn_4+-rich with respect to the Ca-substitution level, consistent with the larger lattice parameter and higher TIM observed following short heat treatments at high temperatures or long treatments at lower temperatures. Films refired in reducing conditions had the largest (200) d-spacing and slightly lower T_IM, as expected from the 30 Ca-substitution level and consistent with the LCMO electronic/magnetic phase diagram constructed for bulk samples.
机译：化学溶液沉积（CSD）程序用于在（100）SrTiO_3单晶衬底上制备外延镧锰酸钙（LCMO）薄膜。发现该膜的巨大磁阻（CMR）特性与采用真空沉积技术处理的材料和整体样品相当。测量在不同温度，O_2分压和不同时间下热处理的薄膜的（200）LCMO d间距和绝缘体-金属转变温度（TIM）。观察到的变化表明晶格参数和TIM之间存在直接联系，可以通过它们对Mn_4 + / Mn_3 +比率的相互依赖性来理解。测量结果还表明，薄膜和粉末样品相对于Ca取代水平，结晶出富含Mn_4 +的结晶，这与高温短时间热处理或低温下长时间热处理后观察到的较大的晶格参数和较高的TIM一致。在还原条件下再烧制的薄膜具有最大（200）d间距，T_IM稍低，这是从30 Ca取代水平所预期的，并且与用于批量样品的LCMO电子/磁性相图一致。

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