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首页> 外文期刊>Journal of Materials Science: Materials in Electronics >Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3 gate on n-type silicon substrate
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Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3 gate on n-type silicon substrate

机译：沉积后退火温度和环境温度对n型硅衬底上射频磁控溅射Sm 2 O 3 栅极的影响

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摘要

Samarium oxide (Sm2O3) thin films with thicknesses in the range of 15–30 nm are deposited on n-type silicon (100) substrate via radio frequency magnetron sputtering. Effects of post-deposition annealing ambient [argon and forming gas (FG) (90% N2 + 10% H2)] and temperatures (500, 600, 700, and 800 °C) on the structural and electrical properties of deposited films are investigated and reported. X-ray diffraction revealed that all of the annealed samples possessed polycrystalline structure with C-type cubic phase. Atomic force microscope results indicated root-mean-square surface roughness of the oxide film being annealed in argon ambient are lower than that of FG annealed samples, but they are comparable at the annealing temperature of 700 °C (Argon—0.378 nm, FG—0.395 nm). High frequency capacitance–voltage measurements are carried out to determine effective oxide charge, dielectric constant and semiconductor-oxide interface trap density of the annealed oxide films. Sm2O3 thin films annealed in FG have smaller amount of effective oxide charge and semiconductor-oxide interface trap density than those oxide films annealed in argon. Current–voltage measurements are conducted to obtain barrier heights of the annealed oxide films during Fowler–Nordheim tunneling.
机译：通过射频磁控溅射在n型硅（100）衬底上沉积厚度为15–30 nm的氧化oxide（Sm 2 O 3 ）薄膜。沉积后退火环境[氩气和形成气（FG）（90％N 2 + 10％H 2 ）]和温度（500、600、700，和800°C）沉积膜的结构和电性能的研究和报道。 X射线衍射表明，所有退火样品均具有C型立方相的多晶结构。原子力显微镜结果表明，在氩气环境中退火的氧化膜的均方根表面粗糙度低于FG退火样品的均方根表面粗糙度，但在700°C的退火温度下（Argon-0.378 nm，FG- 0.395 nm）。进行高频电容-电压测量，以确定退火后的氧化膜的有效氧化物电荷，介电常数和半导体-氧化物界面陷阱密度。在FG中退火的Sm 2 O 3 薄膜的有效氧化物电荷量和半导体-氧化物界面陷阱密度比在氩气中退火的氧化物膜要小。进行电流-电压测量以获得在Fowler-Nordheim隧穿过程中退火的氧化膜的势垒高度。

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