Thin films of molybdenum oxide were formed on glass and silicon substrates by sputtering of molybdenum target under various sputtering powers in the range 2.3–6.8 W/cm2, at a constant oxygen partial pressure of 2 × 10−4 mbar and substrate temperature 523 K employing DC magnetron sputtering technique. The effect of sputtering power on the core level binding energies, chemical binding configurations, crystallographic structure, surface morphology and electrical and optical properties was systematically studied. X-ray photoelectron spectroscopic studies revealed that the films formed at sputtering powers less than 5.7 W/cm2 were mixed oxidation states of Mo5+ and Mo6+. The films formed at 5.7 W/cm2 contained the oxidation state Mo6+ of MoO3. Fourier transform infrared spectra contained the characteristic optical vibrations. The presence of a sharp absorption band at 1,000 cm−1 in the case of the films formed at 5.7 W/cm2 was also conformed the existence of α-phase MoO3. X-ray diffraction studies also confirmed that the films formed at sputtering powers less than 5.7 W/cm2 showed the mixed phase of α-and β-phase of MoO3 where as at sputtering power of 5.7 W/cm2 showed single phase α-MoO3. The electrical conductivity of the films increased from 8 × 10−6 to 1.2 × 10−4 Ω−1 cm−1, the optical band gap decreased from 3.28 to 3.12 eV and the refractive index decreased from 2.12 to 1.94 with the increase of sputtering power from 2.3 to 6.8 W/cm2, respectively.
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机译：在2×10 <恒定的氧分压下，通过在2.3–6.8 W / cm 2 范围内的各种溅射功率下溅射钼靶，在玻璃和硅基板上形成氧化钼薄膜。 sup> -4 mbar和采用直流磁控溅射技术的衬底温度523K。系统研究了溅射功率对核能级键合能，化学键合构型，晶体结构，表面形貌以及电学和光学性质的影响。 X射线光电子能谱研究表明，溅射功率小于5.7 W / cm 2 形成的膜为Mo 5 + 和Mo 6+的混合氧化态。 。以5.7 W / cm 2 形成的膜具有MoO 3 的氧化态Mo 6 + 。傅立叶变换红外光谱包含特征性的光学振动。在以5.7W / cm 2 形成膜的情况下，在1,000cm -1 处存在陡峭的吸收带，这也与α相MoO < sub> 3 。 X射线衍射研究还证实，以小于5.7 W / cm 2 的溅射功率形成的膜显示MoO 3 的α和β相混合相，其中溅射功率为5.7 W / cm 2 时显示出单相α-MoO 3 。薄膜的电导率从8×10 -6 增加到1.2×10 -4 Ω -1 cm -1 < / sup>，随着溅射功率从2.3 W / cm 2 增大，光学带隙分别从3.28 eV和3.12 eV减小，折射率从2.12 eV减小到1.94 eV。
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