In this paper, highly crystallized silicon films can be obtained by using a new metal-mediated mechanism. In this method, the infrared radiation was absorbed by a reusable metal-coated plate and then the photon energy was converted into heat. The transferred heat was provided to crystallize amorphous silicon into polycrystalline silicon. Contrary to the conventional metal induced crystallization method, it was proved that this proposed method was free from the inclusion of metal atom in crystallized films. The average grain size, surface roughness and average sheet resistance of crystallized film are 0.9 μm, 0.51 nm and 90 Ω/□, respectively.
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