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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Carrier recombination mechanisms in solar cells fabricated using flash-lamp-crystallized polycrystalline silicon films
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Carrier recombination mechanisms in solar cells fabricated using flash-lamp-crystallized polycrystalline silicon films

机译：使用闪光灯结晶的多晶硅薄膜制造的太阳能电池中的载流子复合机理

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摘要

Flash lamp annealing (FLA), millisecond-order discharge from a Xe lamp array, can form a few μm-thick polycrystalline silicon (poly-Si) films on low-cost glass substrates by crystallizing precursor a-Si films, and flash-lamp-crystallized (FLC) poly-Si films can be processed to solar cells that actually show rectifying and photovoltaic properties. The conversion efficiencies of FLC poly-Si solar cells are, however, only about 1% at present. In order to clarify the cause of the low conversion efficiency, we have investigated carrier recombination mechanisms in p+-a-Si/FLC poly-Si heterojunction solar cells from their I-V characteristics. The saturation current densities (J0) of the solar cells fabricated using FLC poly-Si films with surface voids have an activation energy (Ea) of ~0.8 eV, which is close to the energy of effective barrier height, the sum of absorber built-in energy and the energy difference of the bulk Fermi level to the valence band. This means that carrier recombination tends to occur at a p+-a-Si/FLC poly-Si interface. On the other hand, the use of FLC poly-Si films after etching off surface voids, which are formed during crystallization, leads to higher Ea of J0 of 1.12 eV, accompanied with improvement in conversion efficiency. This value is equivalent to the band gap energy (Eg) of c-Si, which means that carrier recombination mainly occurs inside FLC poly-Si. These facts indicate that the removal of surface voids is essential to realize a high-quality heterojunction interface, and more effective defect termination in FLC poly-Si films would result in further improvement in solar cell properties.
机译：通过Xe灯阵列的毫秒级放电，闪光灯退火（FLA）可以通过使前体a-Si膜和闪光灯结晶而在低成本玻璃基板上形成几微米厚的多晶硅（poly-Si）膜结晶的（FLC）多晶硅膜可以加工成实际上具有整流和光伏特性的太阳能电池。然而，目前FLC多晶硅太阳能电池的转换效率仅为约1％。为了阐明转换效率低的原因，我们从I + V特性研究了p + -a-Si / FLC多晶硅异质结太阳能电池中的载流子复合机理。使用具有表面空隙的FLC多晶硅薄膜制造的太阳能电池的饱和电流密度（J0）的活化能（Ea）为〜0.8 eV，接近有效势垒高度的能量，即吸收体的总和。的能量和体费米能级与价带的能量差。这意味着载流子复合倾向于在p + -a-Si / FLC多晶硅界面处发生。另一方面，在蚀刻掉在结晶期间形成的表面空隙之后使用FLC多晶硅膜导致较高的J0的Ea为1.12eV，并伴随着转换效率的提高。此值等于c-Si的带隙能（Eg），这意味着载流子复合主要发生在FLC多晶硅内部。这些事实表明，表面空隙的去除对于实现高质量异质结界面至关重要，而FLC多晶硅膜中更有效的缺陷终止将导致太阳能电池性能的进一步改善。

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