首页>
外国专利>
METHOD FOR FABRICATING POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL AND POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL FABRICATED BY THE SAME
METHOD FOR FABRICATING POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL AND POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL FABRICATED BY THE SAME
展开▼
机译:制备多晶硅薄膜硅太阳能电池的方法及制备多晶硅薄膜硅太阳能电池的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
An embodiment of the present invention relates to a method for manufacturing a polycrystalline silicon thin film solar cell and a polycrystalline silicon thin film solar cell manufactured by the same. The objective of the present invention is to crystallize a non-crystalline silicon thin film formed on a low price substrate by electron beams to have a high crystallization fraction for high quality and a low temperature process. To achieve the objective, disclosed in an embodiment of the present invention is a method for manufacturing a polycrystalline silicon thin film solar cell, comprising a substrate preparation step of preparing a substrate; a 1+ type non-crystalline silicon layer deposition step of forming a 1+ type non-crystalline silicon layer on the substrate; a 1 non-crystalline silicon layer deposition step of forming a 1 type non-crystalline silicon layer on the 1+ type non-crystalline silicon layer; an absorption formation step of irradiating the 1 type non-crystalline silicon layer with electron beams and crystallizing the 1 type non-crystalline silicon layer and the 1+ type non-crystalline silicon layer to form an absorption layer; a 2 type non-crystalline silicon layer deposition step of forming a 2 type non-crystalline silicon layer on the absorption layer; and an emitter layer formation step of irradiating the 2 type non-crystalline silicon layer with electron beams and crystallizing the 2 type non-crystalline silicon layer to form an emitter layer. [Reference numerals] (AA) Start; (BB) End; (S10) Prepare a substrate; (S20) Deposit a 1+ type non-crystalline silicon layer; (S30) Deposit a 1 type non-crystalline silicon layer; (S40) Form an absorption layer; (S50) Deposit a 2 type non-crystalline silicon layer; (S60) Form an emitter layer; (S70) Form an electrode
展开▼