首页> 外国专利> METHOD FOR FABRICATING POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL AND POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL FABRICATED BY THE SAME

METHOD FOR FABRICATING POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL AND POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL FABRICATED BY THE SAME

机译:制备多晶硅薄膜硅太阳能电池的方法及制备多晶硅薄膜硅太阳能电池的方法

摘要

An embodiment of the present invention relates to a method for manufacturing a polycrystalline silicon thin film solar cell and a polycrystalline silicon thin film solar cell manufactured by the same. The objective of the present invention is to crystallize a non-crystalline silicon thin film formed on a low price substrate by electron beams to have a high crystallization fraction for high quality and a low temperature process. To achieve the objective, disclosed in an embodiment of the present invention is a method for manufacturing a polycrystalline silicon thin film solar cell, comprising a substrate preparation step of preparing a substrate; a 1+ type non-crystalline silicon layer deposition step of forming a 1+ type non-crystalline silicon layer on the substrate; a 1 non-crystalline silicon layer deposition step of forming a 1 type non-crystalline silicon layer on the 1+ type non-crystalline silicon layer; an absorption formation step of irradiating the 1 type non-crystalline silicon layer with electron beams and crystallizing the 1 type non-crystalline silicon layer and the 1+ type non-crystalline silicon layer to form an absorption layer; a 2 type non-crystalline silicon layer deposition step of forming a 2 type non-crystalline silicon layer on the absorption layer; and an emitter layer formation step of irradiating the 2 type non-crystalline silicon layer with electron beams and crystallizing the 2 type non-crystalline silicon layer to form an emitter layer. [Reference numerals] (AA) Start; (BB) End; (S10) Prepare a substrate; (S20) Deposit a 1+ type non-crystalline silicon layer; (S30) Deposit a 1 type non-crystalline silicon layer; (S40) Form an absorption layer; (S50) Deposit a 2 type non-crystalline silicon layer; (S60) Form an emitter layer; (S70) Form an electrode
机译:本发明的实施方式涉及一种多晶硅薄膜太阳能电池的制造方法以及由其制造的多晶硅薄膜太阳能电池。本发明的目的是使通过电子束在低价衬底上形成的非晶硅薄膜结晶以具有高结晶分数,从而用于高质量和低温工艺。为了达到该目的,本发明实施例公开了一种多晶硅薄膜太阳能电池的制造方法,包括:制备衬底的步骤; 1+型非晶硅层沉积步骤,在所述衬底上形成1+型非晶硅层; 1非晶硅层沉积步骤,其在1+型非晶硅层上形成1型非晶硅层。吸收形成步骤是,对第一类型的非晶硅层照射电子束,并使该第一类型的非晶硅层和第一类型的非晶硅层结晶,以形成吸收层。 2型非晶硅层沉积步骤,其在吸收层上形成2型非晶硅层。发射极层形成步骤是,用电子束照射2型非晶态硅层,并使2型非晶态硅层结晶而形成发射极层。 [参考数字](AA)开始; (BB)结束; (S10)准备基板; (S20)沉积1+型非晶硅层; (S30)沉积一种非晶硅层; (S40)形成吸收层; (S50)沉积2型非晶硅层; (S60)形成发射极层; (S70)形成电极

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