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首页> 外文期刊>Journal of materials science >Effect of consumption of the sol-gel deposited ZnO seed layer on the growth and properties of high quality ZnO nanorods
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Effect of consumption of the sol-gel deposited ZnO seed layer on the growth and properties of high quality ZnO nanorods

机译：溶胶-凝胶沉积的ZnO种子层消耗对高质量ZnO纳米棒生长和性能的影响

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Zinc oxide (ZnO) nanorods (NRs) with high transmittance and low resistance were produced on glass substrates in two steps. Initially, a ZnO seed layer was produced via sol–gel spin coating and heat treatment, and in the second step ZnO-NRs were grown on the ZnO seed layer via hydrothermal growth. The ZnO samples were identified by XRD. Average crystallite sizes were found to be 45 and 60 nm, for the ZnO seed layer and the ZnO-NRs, respectively, from XRD results using the Scherrer formula. Average grain sizes of the ZnO thin films were determined with FE-SEM and found to be 62 and 68 nm for the ZnO seed layer and the ZnO-NRs, respectively. The ZnO-NRs were very dense when grown to a (film) thickness exceeding that of the seed layer. After the growth of the ZnO-NRs, the starting thickness of ZnO seed layer was reduced from 360 to 60 nm. This revealed that the ZnO-NRs’ growth consumes the sol–gel deposited ZnO seed layer significantly, which in turn affects the NR array’s properties. The electrical conductivity values of the ZnO seed layer and ZnO-NRs/ZnO seed structure films were measured as 6.98 × 10_(−9)and 2.08 × 10_(−8) Ω_(−1) cm_(−1)at 25 °C, and 9.31 × 10_(−8)and 8.99 × 10_(−7) Ω_(−1) cm_(−1)at 300 °C, respectively. In other words, the ZnO-NRs/ZnO seed structure had higher electrical conductivity than the starting ZnO seed layer alone. In agreement, the ZnO-NRs/ZnO seed structure had a much higher transmittance (80–90% in the UV–Vis range) than the starting seed layer. These suggested that the ZnO-NRs has better crystal quality with lower defects along their length and hence the seed layer consumption is a benefical factor in obtaining ZnO NR arrays with high quality.
机译：分两步在玻璃基板上生产出具有高透射率和低电阻的氧化锌（ZnO）纳米棒（NRs）。最初，通过溶胶-凝胶旋涂和热处理产生了ZnO晶种层，第二步，通过水热生长在ZnO晶种层上生长了ZnO-NRs。 ZnO样品通过XRD鉴定。使用Scherrer公式从XRD结果得出，ZnO籽晶层和ZnO-NRs的平均微晶尺寸分别为45和60 nm。 ZnO薄膜的平均晶粒尺寸用FE-SEM测定，发现ZnO籽晶层和ZnO-NRs分别为62和68 nm。当ZnO-NRs的生长（膜）厚度超过种子层的厚度时，其密度很高。 ZnO-NRs生长后，ZnO种子层的起始厚度从360纳米减小到60纳米。这表明ZnO-NRs的生长会大量消耗溶胶-凝胶沉积的ZnO种子层，进而影响NR阵列的性能。 ZnO种子层和ZnO-NRs / ZnO种子结构膜的电导率值在25°C下测得为6.98×10 _（− 9）和2.08×10 _（-8）Ω_（− 1）cm _（-1） ，分别在300°C下为9.31×10 _（− 8）和8.99×10 _（− 7）Ω_（− 1）cm _（-1）。换句话说，ZnO-NRs / ZnO种子结构比单独的起始ZnO种子层具有更高的电导率。一致的是，ZnO-NRs / ZnO种子结构比起始种子层具有更高的透射率（在UV-Vis范围内为80-90％）。这些表明，ZnO-NRs具有更好的晶体质量，沿其长度方向上的缺陷较少，因此种子层消耗是获得高质量ZnO NR阵列的有益因素。

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