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首页> 外文期刊>Journal of materials science >Quantum efficiency of heterostructured AlN/Al_xGa_(1-x)N photocathodes with graded bandgap emission layer
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Quantum efficiency of heterostructured AlN/Al_xGa_(1-x)N photocathodes with graded bandgap emission layer

机译：带隙带隙发射层的异质结构AlN / Al_xGa_（1-x）N光电阴极的量子效率

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摘要

A heterostructured AlN/Al~(x)Ga~(1−x)N photocathode consisting of a sapphire substrate layer, a AlN buffer layer, and a graded bandgap emission layer is proposed to improve the quantum efficiency of AlGaN photocathode. The theoretical models for transmission-mode and reflection-mode photocathodes were deduced based on one-dimensional continuity equations to analyze the characteristics of the devices. Results show that the multilevel built-in electric field induced by the bandgap gradation in the emission layer can improve the quantum efficiency because of the longer electron diffusion length and the reduction of the back-interface recombination losses. The effect of thicknesses of photocathodes and Al composition in the sublayers on efficiency is discussed. This work would provide theoretical guidance for better performance of AlGaN photocathodes.
机译：为了提高AlGaN光电阴极的量子效率，提出了一种由蓝宝石衬底层，AlN缓冲层和梯度带隙发射层组成的AlN / Al〜（x）Ga〜（1-x）N异质结构光电阴极。基于一维连续性方程推导了透射型和反射型光电阴极的理论模型，以分析器件的特性。结果表明，由于更长的电子扩散长度和减少的后界面复合损失，由发射层中的带隙灰度引起的多级内置电场可以提高量子效率。讨论了子层中光电阴极厚度和Al组成对效率的影响。这项工作将为AlGaN光电阴极的更好性能提供理论指导。

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