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首页> 外文期刊>Journal of materials science >High-gain AlGaN/GaN visible-blind avalanche heterojunction phototransistors
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High-gain AlGaN/GaN visible-blind avalanche heterojunction phototransistors

机译：高增益AlGaN / GaN可见盲雪崩异质结光电晶体管

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摘要

We report the fabrication and characterization of the visible-blind AlGaN/GaN-based avalanche heterojunction phototransistors (AHPT) with a collector-up configuration. The fabricated devices with 150-μm-diameter active area exhibit low dark currents of less than 20 pA at collector-emitter voltage (V_(CE)) below 5.0 V. Optical gain as high as 3.6 ×10~4 was obtained due to the combination of photon-induced current amplification and carrier multiplication at an operating voltage of V_(CE) = 53.5 V, which is much lower than the avalanche breakdown voltage required for GaN-based visible-blind avalanche photodiodes. An ultraviolet-visible rejection ratio of more than 100 was measured at zero bias. Under V_(CE) = 5 V, a peak responsivity of 0.91 A/W was obtained at 335 nm.
机译：我们报告了具有集电极结构的可见盲AlGaN / GaN基雪崩异质结光电晶体管（AHPT）的制造和表征。制成的有源区直径为150μm的器件在低于5.0 V的集电极-发射极电压（V_（CE））时表现出小于20 pA的低暗电流。由于该器件的光增益高达3.6×10〜4 V_（CE）= 53.5 V时，光子感应电流放大和载流子倍增的组合，远低于GaN基可见盲雪崩光电二极管所需的雪崩击穿电压。在零偏压下测得的紫外线-可见排斥比大于100。在V_（CE）= 5 V下，在335 nm处获得的峰值响应率为0.91 A / W。

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