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首页> 外文期刊>Journal of materials science >Fabrication of Cu(In,Ga)Se_2 thin films by ion beam sputtering deposition from a quaternary target at different substrate temperatures
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Fabrication of Cu(In,Ga)Se_2 thin films by ion beam sputtering deposition from a quaternary target at different substrate temperatures

机译：在不同衬底温度下通过四元靶离子束溅射沉积制备Cu（In，Ga）Se_2薄膜

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摘要

Cu(In, Ga)Se_2 (CIGS) thin films were fabricated by ion beam sputtering deposition from a single quaternary target at different substrate temperatures (T_(sub)). The thin films were characterized with X-ray diffractom-etry, scanning electron microscopy, energy-dispersive X-ray spectroscopy and four-point probe technique to study the microstructures, surface morphology, composition and electrical properties, respectively. The results show that the films grown above 400 ℃ are of chalcopyrite structure. Cu(In_(0.7)Ga_(0.3))Se_2 thin film was obtained when T_(sub) is 550 ℃. The Cu and Se atomic percentage when T_(sub) is above 500 ℃ is higher than when T_(sub) is below 500 ℃. With the increase in T_(sub), the surfaces morphology of the films is denser and the resistivity of the films decreases.
机译：通过离子束溅射沉积在不同的衬底温度（T_（sub））下从单个四元靶制备Cu（In，Ga）Se_2（CIGS）薄膜。通过X射线衍射，扫描电子显微镜，能量色散X射线光谱和四点探针技术对薄膜进行了表征，分别研究了薄膜的微观结构，表面形貌，组成和电学性能。结果表明，在400℃以上生长的薄膜具有黄铜矿结构。当T_（sub）为550℃时，得到Cu（In_（0.7）Ga_（0.3））Se_2薄膜。当T_（sub）高于500℃时，Cu和Se原子百分数高于T_（sub）低于500℃时的Cu和Se原子百分比。随着T_（sub）的增加，膜的表面形态变得更致密，并且膜的电阻率降低。

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  • 来源
    《Journal of materials science》 |2012年第11期|1957-1960|共4页
  • 作者

    Ping Fan; Jing-rong Chi; Guang-xing Liang; Xing-min Cai; Dong-ping Zhang; Zhuang-hao Zheng; Peng-ju Cao; Tiao-bao Chen;

  • 作者单位

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

    College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen 518060, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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