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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Diamond nanopatterns fabricated by room-temperature nanoimprinting technology with diamond molds using polysiloxane
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Diamond nanopatterns fabricated by room-temperature nanoimprinting technology with diamond molds using polysiloxane

机译：使用聚硅氧烷通过金刚石模具通过室温纳米压印技术制造的金刚石纳米图案

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摘要

Fabrication of diamond nanopatterns in room-temperature (RT) nanoimprint lithography (NIL) with chemical vapor deposited (CVD) diamond molds using polysiloxane as RT-imprint resist material was investigated. The diamond molds of a convex lattice with 1 mu m line-width and 5 mu m pitch, and a cylinder dot with 200 nm diameter and 1 mu m pitch which has a height of 1 mu m using RT-NIL-process were fabricated with Bi4Ti3O12 octylate (oxide) mask in electron beam lithography technology. The maximum radio frequency (RF) oxygen plasma-etching selectivity (diamond/polysiloxane) of 19 was obtained under the conditions of RF power of 100 W, oxygen gas flow rate of 10 sccm and background gas pressure of 30 Pa. It was found that the optimum imprinting pressure and its depth obtained after the press duration of 10 min were 0.8 MPa and about 0.5 mu m, respectively. The resulting diamond nanopatterns of a concave lattice with 1 mu m line-width and 5 mu m pitch, and a concave cylinder dot with 200 nm diameter and 1 mu m pitch which have a height of 1 mu m after RF oxygen plasma-etching (100W, 10 sccm, 30 Pa, 40 min) were fabricated with diamond mold RT-NIL using polysiloxane.
机译：研究了在室温（RT）纳米压印光刻（NIL）中使用聚硅氧烷作为RT-压印抗蚀剂材料的化学气相沉积（CVD）金刚石模具的金刚石纳米图案的制备。使用RT-NIL工艺制造线宽为1μm，间距为5μm的凸晶格和高度为1μm的直径为200nm，间距为1μm的圆柱点的金刚石模具，其高度为1μm。电子束光刻技术中的Bi4Ti3O12辛酸酯（氧化物）掩模。在RF功率为100 W，氧气流量为10 sccm，背景气压为30 Pa的条件下，最大射频（RF）氧等离子体刻蚀选择性（金刚石/聚硅氧烷）为19。发现压制10分钟后获得的最佳压印压力和深度分别为0.8 MPa和约0.5μm。在RF氧等离子体蚀刻之后，得到的线宽为1μm的凹晶格和间距为5μm的凹面晶格，以及直径为200 nm和1μm的凹柱体点的高度为1μm的金刚石纳米图案（用金刚石模RT-NIL使用聚硅氧烷制造100W，10 sccm，30 Pa，40分钟）。

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