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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Novel direct MOCVD growth of InxGa1-xAs and InP metamorphic layers on GaAs substrates
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Novel direct MOCVD growth of InxGa1-xAs and InP metamorphic layers on GaAs substrates

机译：GaAs衬底上InxGa1-xAs和InP变质层的新型直接MOCVD生长

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摘要

A review of the technique of direct growing high-quality InxGa1-xAs or InP buffer layers on GaAs substrates by metal-organic chemical vapor deposition (MOCVD) is given. This low-temperature growth method benefits the improvement of metamorphic device performance. In this work, a simple and novel method of directly deposited thin InxGa1-xAs or InP buffer layers (<1 mu m) on GaAs substrates is presented, instead of strained-layer superlattice, two-step, graded or CS (compliant substrates) methods, while maintaining low dislocations, high crystal quality, and uniform and mirror like Surfaces. For the direct growth technique of InxGa1-xAs on GaAs, we found an excellent quality In(0.54)Ga(0.4)6As buffer of rms surface roughness of only 0.686 nm by AFM and FWHM of 925 arcsec by XRD can be obtained at a low growth temperature of 440 degrees C with a constant Ga/In-gas partial pressure of 5. The superior results are mainly due to the use Of low temperature growth technology. In addition, we also found this growth technology is available to directly grow InP buffer layers on GaAs. Experimental results conclude that the growth temperature of 480 degrees C in harmony with the V/III ratios range of 130-210 is a suitable window to directly grow InP on GaAs substrates.
机译：综述了通过金属有机化学气相沉积（MOCVD）在GaAs衬底上直接生长高质量InxGa1-xAs或InP缓冲层的技术。这种低温生长方法有益于改善变形器件的性能。在这项工作中，提出了一种简单新颖的直接在GaAs衬底上沉积InxGa1-xAs或InP缓冲薄层（<1μm）的简单方法，代替了应变层超晶格，两步，渐变或CS（顺应性衬底）方法，同时保持低位错，高晶体质量，均匀且像镜面的表面。对于InxGa1-xAs在GaAs上的直接生长技术，我们发现了一种高质量的In（0.54）Ga（0.4）6As缓冲液，通过AFM可以得到有效值的均方根表面粗糙度仅为0.686 nm，而通过XRD可以得到925 arcsec的FWHM Ga / In-gas分压恒定为5时，生长温度为440摄氏度。优异的结果主要是由于使用了低温生长技术。此外，我们还发现这种生长技术可用于直接在GaAs上生长InP缓冲层。实验结果表明，480℃的生长温度与130/210的V / III比范围相协调是在InGaAs衬底上直接生长InP的合适窗口。

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