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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Comparative investigating the properties of Pb-based multilayer ferroelectric thin films for FeRAM
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Comparative investigating the properties of Pb-based multilayer ferroelectric thin films for FeRAM

机译：铅基多层铁电薄膜FeRAM性能的比较研究

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The PbZr0.3Ti0.7O3(PZT) thin film and multilayer PbZr0.3Ti0.7O3/PbTiO3(PZT/PT), PbTiO3/PbZr0.3Ti0.7O3/ PbTiO3(PT/PZT/PT) thin films were prepared by a Sol-Gel method on the Pt(111)/Ti/SiO2/Si(100) substrate for FeRAM application. The microstructure, ferroelectric, fatigue, dielectric, and leakage current properties of these thin films were investigated. The results indicate that the multilayer PT/PZT/PT thin film have a better ferroelectric, fatigue, dielectric and leakage current density properties. Its remanent polarization P-r reaches a maximum value of 21.2 mu C/cm(2) and the coercive field E-c gets to a minimum value of 64.2kV/cm. After 10(10) cycles, it still has more than 80% remnant polarization. The PT/PZT/PT thin film exhibits lower dielectric constant and lower dielectric loss, which is beneficial for FeRAM application. It also has the lowest leakage current density. The leakage current mechanism of the PZT, PZT/PT and PT/PZT/PT thin films is correlated to the microstructure and can be modeled in terms of GBLC and SCLC theory. The microstructure and electric properties of these films are correlated. The double-sided PT seed layers enhance not only the microstructure but also the electric properties. It is evident that the PT/PZT/PT multilayer thin film is a promising candidate for FeRAM application.
机译：PbZr0.3Ti0.7O3（PZT）薄膜和多层PbZr0.3Ti0.7O3 / PbTiO3（PZT / PT），PbTiO3 / PbZr0.3Ti0.7O3 / PbTiO3（PT / PZT / PT）薄膜制备FeRAM应用在Pt（111）/ Ti / SiO2 / Si（100）衬底上的凝胶法。研究了这些薄膜的微结构，铁电，疲劳，介电和漏电流特性。结果表明，多层PT / PZT / PT薄膜具有较好的铁电，疲劳，介电和漏电流密度特性。它的剩余极化强度P-r达到最大值21.2μC / cm（2），矫顽场E-c达到最小值64.2kV / cm。经过10（10）个循环后，它仍然具有超过80％的剩余极化强度。 PT / PZT / PT薄膜具有较低的介电常数和较低的介电损耗，这对于FeRAM应用是有利的。它还具有最低的泄漏电流密度。 PZT，PZT / PT和PT / PZT / PT薄膜的泄漏电流机理与微观结构有关，可以根据GBLC和SCLC理论建模。这些膜的微观结构和电性能是相关的。双面PT晶种层不仅增强了微观结构，而且增强了电性能。显然，PT / PZT / PT多层薄膜是FeRAM应用的有希望的候选者。

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