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Effect of strain on the frequency-independent parameters of the equivalent circuit of island gold films

机译:应变对岛金膜等效电路频率无关参数的影响

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This paper deals with the outcome of a follow-up of our earlier work on the effect of strain on the frequency-dependent resistance (r(p)) of island gold films whose mass thicknesses in nm were 0.5, 1.2, 2.4, 3.5, 5 and 10. The frequency-independent parameters of the equivalent circuit of island metal films are R-b, R-g and C-g where R-b is the macroscopic resistance that associates the conduction within the interior (bulk) of islands, R-g is the macroscopic resistance that accompanies the conduction across the gaps among islands and C-g is the macroscopic capacitance of the film that results from the islands and gaps. We deduced the least-square values of R-b,R-g and C-g for our films by inserting the experimental values of r(p) and the corresponding angular frequencies (omega) into the known equation that relates r(p) to both of omega and the frequency independent parameters; this deduction was done via a computerized analysis. We found that: (1) For the tensional longitudinal strain, an increase in its magnitude is associated with an increase in R-g and a decrease in C-g. (2) For the compressional longitudinal strain, an increase in its value is accompanied by a decrease in R-g and an increase in C-g. (3) R-b is nearly invariant with strain. (4) The increase in the mass thickness of the island gold films is associated with: (i) a decrease in R-b,R-g and an increase in C-g. (ii) a decrease in the gauge factor of the studied films.
机译:本文讨论了我们对应变对岛厚金膜的频率相关电阻(r(p))的影响的后续工作的结果,该岛金膜的质量厚度为nm,0.5、1.2、2.4、3.5,如图5和10所示。岛状金属膜等效电路的频率无关参数为Rb,Rg和Cg,其中Rb是与岛的内部(本体)内的传导相关联的宏观电阻,Rg是伴随岛的内部(本体)导电的宏观电阻。跨岛和Cg间隙的传导是膜的宏观电容,是由岛和间隙引起的。通过将r(p)的实验值和相应的角频率(omega)插入到将r(p)与omega和omega都相关的已知方程式中,我们得出了电影的Rb,Rg和Cg的最小二乘值。频率独立参数;这种推断是通过计算机分析完成的。我们发现:(1)对于拉伸纵向应变,其大小的增加与R-g的增加和C-g的减少有关。 (2)对于纵向压缩应变,其值的增加伴随R-g的减小和C-g的增加。 (3)R-b几乎随应变不变。 (4)岛金膜的质量厚度增加与以下因素有关:(i)R-b,R-g降低和C-g升高。 (ii)所研究的影片的规格因子降低。

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