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Comparative performance of gold wire bonding on rigid and flexible substrates

机译:刚性和柔性基底上金线键合的比较性能

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This paper reports comparative performance of wire bondability of electrolytically plated Au/Ni/Cu bond pads on rigid FR-4 and bismaleimide trazine (BT) PCBs, as well as flexible polyimide (PI) substrate. The metallization surfaces were treated with plasma to study the effect of bond pad surface cleanliness on wire bondability. Process windows were constructed as a function of bonding temperature and bond power for the individual substrate materials. Significant improvements of wire pull strength and process window were noted after plasma treatment with a substantial reduction in minimum bonding temperature from 120 degrees C to 60 degrees C for both the rigid and flexible substrates. The minimum bond power required to produce successful bonds decreased with increasing bonding temperature. At a bonding temperature of 120 degrees C, the process window for the flexible substrate was wider than the rigid substrates. The wire bondability and wire pull strength of rigid substrates decreased with increasing bonding temperature above 120 degrees C due to softening of the substrate which adversely affected the effective bond force and the transmission of ultrasonic energy. In contrast, the wirebonding performance of the flexible substrate remained stable at 120 degrees C or above because the thermo-mechanical properties of flexible PI substrate were rather insensitive to temperature. The process windows of flexible substrates with and without stiffener showed similar bondability.
机译:本文报道了在刚性FR-4和双马来酰亚胺-嗪(BT)PCB以及柔性聚酰亚胺(PI)基板上电解电镀Au / Ni / Cu焊盘的引线键合性能的比较性能。用等离子体处理金属化表面,以研究焊盘表面清洁度对导线可焊性的影响。根据各个基板材料的粘合温度和粘合功率来构建工艺窗口。在等离子处理后,导线的抗拉强度和工艺窗口得到了显着改善,刚性和柔性基板的最小粘合温度从120摄氏度大幅降低到60摄氏度。产生成功键合所需的最小键合功率随键合温度的升高而降低。在120℃的粘合温度下,柔性基板的处理窗口比刚性基板宽。刚性基材的引线键合性和引线抗拉强度会随着键合温度在120摄氏度以上的升高而降低,这是因为衬底的软化会对有效键合力和超声能量的传输产生不利影响。相反,由于挠性PI基板的热机械性质对温度相当不敏感,因此挠性基板的引线键合性能在120℃以上保持稳定。具有和不具有增强剂的柔性基板的加工窗口显示出相似的粘合性。

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