Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector

Salwan K. J. Al-Ani; Raid A. Ismail; Hana F. A. Al-Taay

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Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector

机译：光电特性n：CdS：In / p-Si异质结光电探测器

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Optoelectronic properties of CdS:In/Si anisotype heterojunction photodetector fabricated by depositing of polycrystalline CdS and indium doped CdS films used thermal resistive technique on clean monocrystalline p-type silicon substrates are presented. The effect of In diffusion temperature(T_(d))in CdS layer on the optoelectronic characteristics of these devices has been studied. Two peaks situated at 650 and 800 nm with values of 0.32 and 0.43 A/W, respectively, were observed in the responsivity plot. Other optoelectronics properties such as detectivity, photovoltaic, and response time are also presented.

机译：提出了通过在干净的单晶p型硅衬底上使用热阻技术沉积多晶CdS和铟掺杂的CdS薄膜制备的CdS：In / Si异型异质结光电探测器的光电性能。研究了CdS层中In扩散温度（T_（d））对这些器件光电特性的影响。在响应度图中观察到两个分别位于650和800 nm处的峰，分别为0.32和0.43 A / W。还介绍了其他光电特性，例如探测性，光电和响应时间。

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来源
《Journal of Materials Science. Materials in Electronics》 |2006年第10期|p.819-824|共6页
作者
Salwan K. J. Al-Ani; Raid A. Ismail; Hana F. A. Al-Taay;
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作者单位

Department of Physics, College of science, Al-Mustansiriya University, P.O. Box 47121, Al-Jadirya, Baghdad, Iraq;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类计量学;
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Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector

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