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首页> 外文期刊>Journal of materials science >A thermally robust Ni-FUSI process using in 65 nm CMOS technology
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A thermally robust Ni-FUSI process using in 65 nm CMOS technology

机译：采用65 nm CMOS技术的坚固耐用的Ni-FUSI工艺

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摘要

The interest in the low resistivity fully silicided (FUSI) gate increased significantly because of promising in use as contact to the source, drain, and gate for sub-65 nm/45 nm CMOS devices. NiSi is potentially an attractive material due to its capability to maintain low resistivity even for channel length down to 100 nm. The Formation of thermally stable silicide gates is important for improving the devices fabrication processes. In order to obtain a thermally stable Ni-FUSI gate electrode, we introduced a two-step annealing process associated with properly tuned thickness of the initial Ni film and additional of implantation of BF_2 during the poly-gate formation to push the transformation of NiSi_2 to higher temperatures at about 900℃ and retard agglomeration. A mixed-phase of nickel silicide layer was commonly observed during phase transformation. For the first time, we established an effective way to identify the phase transformations by some nondestructive techniques such as X-ray diffraction, sheet resistance measurement and AFM analysis. The correlations between its electrical and morphological changes during Ni-Si phase transformation were presented. Furthermore, the effect with addition amount of BF_2 impurities into NiSi was investigated. F-incorporationrndemonstrated some improvements in both morphology and phase stability of the NiSi films at high processing temperatures.
机译：由于有望用作低于65 nm / 45 nm CMOS器件的源极，漏极和栅极的接触，对低电阻率全硅化（FUSI）栅极的兴趣大大增加。 NiSi可能具有吸引力，因为它具有即使在通道长度低至100 nm时仍能保持低电阻率的能力。热稳定的硅化物栅极的形成对于改善器件制造工艺很重要。为了获得热稳定的Ni-FUSI栅电极，我们引入了两步退火工艺，该工艺与适当地调整初始Ni膜的厚度以及在多栅形成过程中另外注入BF_2有关，以将NiSi_2转变为较高的温度（约900℃）并阻止结块。通常在相变过程中观察到硅化镍层的混合相。我们首次通过一些无损技术（例如X射线衍射，薄层电阻测量和AFM分析）建立了一种有效的方法来识别相变。提出了Ni-Si相变过程中其电学和形貌变化之间的相关性。此外，研究了在NiSi中添加BF_2杂质的效果。 F掺入证明了在高加工温度下NiSi膜的形貌和相稳定性都得到了一些改善。

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