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首页> 外文期刊>Journal of Materials Science >Characteristics of nanostructure and electrical properties of Ti thin films as a function of substrate temperature and film thickness
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Characteristics of nanostructure and electrical properties of Ti thin films as a function of substrate temperature and film thickness

机译：Ti薄膜的纳米结构和电学特性随衬底温度和膜厚的变化

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摘要

Titanium films of different thickness at different substrate temperatures are prepared using PVD method. The nanostructure of these films was obtained using X-ray diffraction (XRD) and AFM, while the thicknesses were measured by means of Rutherford back scattering (RBS) technique. Resistivity, Hall coefficient, concentration of carriers and the mobility in these films are obtained. The results show that, the rutile phase of TiO2 is formed which is initially amorphous and as the film thickness increases it tends to become textured in (020) direction, which is more pronounced at higher temperatures and possibly transforms to anatase TiO2 with (112) orientation for thickest films of 224 nm. The conductivity and concentration of carriers increase with thickness, while the Hall coefficient and the mobility decrease. The activation energies in these samples were obtained from the Arrhenius plots of σ and R H. For thinner films ( $ E_{hbox{a}} approx 0.4 - 0.6 $ eV) and for thickest film (224 nm) a break point is observed at about 500 K, which is consistent with the idea of more processes becoming activated at higher temperatures.
机译：采用PVD法制备了在不同衬底温度下不同厚度的钛膜。这些膜的纳米结构是使用X射线衍射（XRD）和AFM获得的，而厚度是通过卢瑟福反向散射（RBS）技术测量的。得到这些膜的电阻率，霍尔系数，载流子浓度和迁移率。结果表明，形成了TiO2 的金红石相，该相最初是非晶态的，并且随着膜厚度的增加，它趋向于在（020）方向上织构化，这在较高的温度下更加明显，并且可能转变为锐钛矿型具有（112）取向的224nm最厚膜。载流子的电导率和浓度随厚度增加而增加，而霍尔系数和迁移率减小。这些样品的活化能是从σ和R H 的Arrhenius图获得的。对于较薄的薄膜（$ E_ {hbox {a}}约为0.4-0.6 $ eV），对于最厚的薄膜（224 nm），在约500 K处观察到断裂点，这与更高温度下激活更多过程的想法一致。温度。

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  • 来源
    《Journal of Materials Science》 |2007年第8期|2603-2611|共9页
  • 作者

    H. Savaloni; K. Khojier; M. S. Alaee;

  • 作者单位

    Department of Physics University of Tehran North-Kargar St. Tehran Iran;

    Plasma Physics Research Center Science and Research Campus of Islamic Azad. University P. O. Box 14665-678 Tehran Iran;

    Department of Physics University of Tehran North-Kargar St. Tehran Iran;

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