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首页> 外文期刊>Journal of Materials Science >Effects of Gd doping on the sintering and microwave dielectric properties of BiNbO4 ceramics
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Effects of Gd doping on the sintering and microwave dielectric properties of BiNbO4 ceramics

机译：Gd掺杂对BiNbO4 陶瓷烧结及微波介电性能的影响

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摘要

Gd3+ was chosen as a substitute for Bi3+ in BiNbO4 ceramics, and the substitution effects on the sintering performance and microwave dielectric properties were studied in this paper. The high temperature triclinic phase was observed only in the Bi0.98Gd0.02NbO4 ceramics when sintered at 920 °C. Both bulk densities and dielectric constant (εr) increased with the sintering temperature, while decreased with the Gd content. The quality factor (Q) exhibited a correlation to the Gd content and the microstructures of Bi1?x Gd x NbO4 ceramics. At the sintering temperature of 900 °C, Bi0.992Gd0.008NbO4 ceramics exhibited microwave dielectric properties of εr ～ 43.87, Q × f ～ 16,852 GHz (at 4.3 GHz), and its temperature coefficient of resonant frequency (τf) was found to be near-to-zero.
机译：在BiNbO4 陶瓷中选择了Gd3 + 作为Bi3 + 的替代物，研究了其对烧结性能和微波介电性能的影响。在920°C烧结时，仅在Bi0.98 Gd0.02 NbO4 陶瓷中观察到高温三斜晶相。堆密度和介电常数（εr）均随烧结温度的升高而增加，而随Gd含量的降低而降低。品质因数（Q）与Bi1？x Gd x NbO4 陶瓷的Gd含量和微观结构相关。在900°C的烧结温度下，Bi0.992 Gd0.008 NbO4 陶瓷的微波介电特性为εr〜43.87，Q×f〜16,852 GHz（在4.3 GHz），其谐振频率温度系数（τf）接近于零。

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  • 来源
    《Journal of Materials Science》 |2007年第16期|7052-7055|共4页
  • 作者

    Yue Pang; Chaowei Zhong; Shuren Zhang;

  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science ampamp Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science ampamp Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science ampamp Technology of China Chengdu 610054 China;

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