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An alternative approach to in situ synthesize single crystalline ZnO nanowires by oxidizing granular zinc film

机译:通过氧化颗粒状锌膜原位合成单晶ZnO纳米线的另一种方法

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摘要

ZnO nanowires were synthesized by a relatively simple process—oxidizing granular Zn films at a relatively low temperature (450–600 °C) without catalyst. The zinc film was initially fabricated by sputter deposition in an argon atmosphere at ambient temperature using Zn metal as the sputter target. After subsequent annealing in an air or oxygen atmosphere, ZnO nanowires were found to grow from individual Zn nanograins. The investigation has also showed that the nanowires preferably grow from relatively porous Zn film and a small amount of oxygen flow is beneficial to the growth of nanowires. The resultant single crystal ZnO nanowires obtained from annealing at 600 °C in an oxygen atmosphere had a mean diameter less than 50 nm and had a very good structural quality. This process provides an alternative method to produce ultra-fine ZnO nanowires standing on the substrate.
机译:ZnO纳米线是通过相对简单的过程合成的-在相对低的温度(450–600°C)下无需催化剂即可氧化颗粒状Zn膜。首先,通过在环境温度的氩气氛中通过溅射沉积使用锌金属作为溅射靶来制造锌膜。随后在空气或氧气气氛中退火后,发现ZnO纳米线从单个Zn纳米晶粒中生长出来。研究还表明,纳米线优选地从相对多孔的Zn膜生长,并且少量的氧气流有利于纳米线的生长。通过在氧气氛中在600℃下退火而获得的所得单晶ZnO纳米线具有小于50nm的平均直径并且具有非常好的结构质量。此工艺提供了另一种方法来生产站立在基板上的超细ZnO纳米线。

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  • 来源
    《Journal of Materials Science》 |2007年第16期|6489-6493|共5页
  • 作者

    Z. W. Liu; S. W. Yeo; C. K. Ong;

  • 作者单位

    Center for Superconducting and Magnetic Materials Department of Physics National University of Singapore Singapore 117542 Singapore;

    Center for Superconducting and Magnetic Materials Department of Physics National University of Singapore Singapore 117542 Singapore;

    Center for Superconducting and Magnetic Materials Department of Physics National University of Singapore Singapore 117542 Singapore;

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